Datasheet > AUIRLS3034TRR

AUIRLS3034TRR

更新时间： 2024-11-25 01:20:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	257K
描述
HEXFETPower MOSFET

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AUIRLS3034TRR 数据手册

PD - 97716A

AUTOMOTIVE GRADE

AUIRLS3034

HEXFET^®Power MOSFET

Features

V_DSS

R_DS(on)typ.

max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

40V

1.4m

1.7m

●

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *



343A

195A

Description

Specifically designed for Automotive applications, this HEXFET^®

PowerMOSFETutilizesthelatestprocessingtechniquestoachieve

extremely low on-resistance per silicon area. Additional features of

this design are a 175°C junction operating temperature, fast

switching speed and improved repetitive avalanche rating . These

features combine to make this design an extremely efficient and

reliable device for use in Automotive applications and a wide variety

of other applications.

D²Pak

AUIRLS3034

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured

under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Symbol

I_D@ T_C= 25°C

Parameter

Max.

343

243

195

1372

375

2.5

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

E_AS

I_AR

±20

255

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Avalanche Current

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy

E_AR

4.6

Peak Diode Recovery

dv/dt

T_J

V/ns

Operating Junction and

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

°C

300

10lbf in (1.1N m)

Mounting torque, 6-32 or M3 screw

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.4

Units

R_

Junction-to-Case

°C/W

R_

–––

Junction-to-Ambient (PCB Mount)

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

11/29/11

12 3 4 5 6 7...12

中文翻译

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与AUIRLS3034TRR相关器件

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