PD - 97716A
AUTOMOTIVE GRADE
AUIRLS3034
HEXFET® Power MOSFET
Features
D
S
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
40V
1.4m
1.7m
●
●
●
●
●
●
●
●
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
343A
195A
D
Description
Specifically designed for Automotive applications, this HEXFET®
PowerMOSFETutilizesthelatestprocessingtechniquestoachieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
S
G
D2Pak
AUIRLS3034
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
Parameter
Max.
343
243
195
1372
375
2.5
Units
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
ID @ TC = 100°C
ID @ TC = 25°C
IDM
A
PD @TC = 25°C
W
Maximum Power Dissipation
Linear Derating Factor
W/°C
V
VGS
EAS
IAR
±20
255
Gate-to-Source Voltage
mJ
A
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
See Fig. 14, 15, 22a, 22b,
Repetitive Avalanche Energy
EAR
mJ
4.6
Peak Diode Recovery
dv/dt
TJ
V/ns
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
°C
300
10lbf in (1.1N m)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Symbol
Parameter
Typ.
–––
Max.
0.4
40
Units
R
Junction-to-Case
JC
°C/W
R
–––
Junction-to-Ambient (PCB Mount)
JA
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/29/11
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