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AUIRLS4030TRR

更新时间： 2024-11-24 12:59:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
13页	274K
描述
Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3

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AUIRLS4030TRR 数据手册

PD - 96406B

AUTOMOTIVE GRADE

AUIRLS4030

Features

AUIRLSL4030

Optimized for Logic Level Drive

Advanced Process Technology

UltraLowOn-Resistance

HEXFET^®Power MOSFET

V_DSS

R_DS(on)typ.

max.

100V

175°COperatingTemperature

Fast Switching

3.4m

4.3m

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

Automotive Qualified *

I_D

180A

Description

Specifically designed for Automotive applications, this

HEXFET^®Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per

siliconarea. Additionalfeaturesofthisdesign area175°C

junctionoperatingtemperature, fastswitchingspeedand

improved repetitive avalanche rating . These features

combine to make this design an extremely efficient and

reliable device for use in Automotive applications and a

wide variety of other applications.

D²Pak

AUIRLS4030

TO-262

AUIRLSL4030

Gate

Drain

Source

Absolute Maximum Ratings

StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.Thesearestress

ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications

is not implied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability. Thethermal

resistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillairconditions.Ambienttemperature(T_A)

is 25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

180

130

730

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

P_D@T_C= 25°C

370

2.5

± 16

305

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally limited)

Avalanche Current

W/°C

V_GS

E_AS

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy

E_AR

dv/dt

T_J

V/ns

Peak Diode Recovery

Operating Junction and

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

°C

300

Thermal Resistance

Parameter

Typ.

–––

Max.

0.40

Units

°C/W

R_θ

Junction-to-Case

Junction-to-Ambient (PCB Mount) , D²Pak

R_θJA

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

11/17/11

12 3 4 5 6 7...13

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与AUIRLS4030TRR相关器件

型号	品牌	获取价格	描述	数据表
AUIRLS8409-7P	INFINEON	获取价格	Power Field-Effect Transistor,
AUIRLS8409-7TRL	INFINEON	获取价格	Power Field-Effect Transistor,
AUIRLSL4030	INFINEON	获取价格	Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon,
AUIRLU024N	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance Fully Avalanche Rated
AUIRLU024Z	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Met
AUIRLU2905	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
AUIRLU3110Z	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRLU3114Z	INFINEON	获取价格	Advanced Process Technology
AUIRLZ24NS	INFINEON	获取价格	Power Field-Effect Transistor,
AUIRLZ24NSTRL	INFINEON	获取价格	暂无描述

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