Datasheet > AUIRLZ24NSTRL

AUIRLZ24NSTRL

更新时间： 2024-11-24 14:47:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	296K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AUIRLZ24NSTRL 数据手册

AUIRLZ24NS

AUIRLZ24NL

AUTOMOTIVE GRADE

HEXFET^®Power MOSFET

Features

Advanced Process Technology

V_DSS

55V

0.06

Logic Level Gate Drive

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

Automotive Qualified *

R_DS(on)max.

I_D

18A

Description

SpecificallydesignedforAutomotiveapplications,thisHEXFET^®

Power MOSFET utilizes the latest processing techniques to

achieveextremelylowon-resistancepersiliconarea. Additional

featuresofthisdesign area175°Cjunctionoperatingtempera-

ture, fast switching speed and improved repetitive avalanche

rating . These features combine to make this design an ex-

tremely efficient and reliable device for use in Automotive

TO-262

AUIRLZ24NL

D²Pak

AUILZ24NS

applications and a wide variety of other applications.

Standard Pack

Form

Tube

Base Part Number

Package Type

Orderable Part Number

Quantity

800

AUIRLZ24NS

AUIRLZ24NSTRL

AUIRLZ24NS

AUIRLZ24NL

D2-Pak

TO-262

Tape and Reel Left

Tube

AUIRLZ24NL

AbsoluteMaximumRatings

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress

ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is

not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal

resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T_A) is

25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

3.8

P_D@T_A= 25°C

Maximum Power Dissipation

Linear Derating Factor

0.30

_D@T_C= 25°C

W/°C

± 16

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

4.5

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery

V/ns

5.0

-55 to + 175

Operating Junction and

°C

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

300

Thermal Resistance

Parameter

Typ.

–––

Max.

3.3

Units

R_θ

Junction-to-Case

°C/W

R_θ

Junction-to-Ambient (PCB Mounted, steady-state)**

–––

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

Submit Datasheet Feedback

February 23, 2015

12 3 4 5 6 7...12

中文翻译

下载PDF

与AUIRLZ24NSTRL相关器件

型号	品牌	获取价格	描述	数据表
AUIRLZ44Z	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRS1170S	INFINEON	获取价格	AUIRS1170S 是一款通过汽车认证的智能次级侧驱动器 IC，该产品设计用于驱动在隔离
AUIRS2003S	INFINEON	获取价格	HALF-BRIDGE DRIVER
AUIRS2003STR	INFINEON	获取价格	Full Bridge Based Peripheral Driver, CMOS, PDSO8, ROHS COMPLIANT, MS-012AA, SOIC-8
AUIRS2004S	INFINEON	获取价格	Automotive Grade HALF-BRIDGE DRIVER IC Undervoltage lockout
AUIRS2004STR	INFINEON	获取价格	Automotive Grade HALF-BRIDGE DRIVER IC Undervoltage lockout
AUIRS2012S	INFINEON	获取价格	High and low side gate driver
AUIRS2012S_15	INFINEON	获取价格	High and low side gate driver
AUIRS2012STR	INFINEON	获取价格	Half Bridge Based Peripheral Driver, 2A, PDSO8, ROHS COMPLIANT, MS-012AA, SOIC-8
AUIRS20161S	INFINEON	获取价格	One high side output and internal low side Vs recharge.

与AUIRLZ24NSTRL相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

AUIRLZ24NSTRL

AUIRLZ24NSTRL 数据手册

与AUIRLZ24NSTRL相关器件

与AUIRLZ24NSTRL相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AUIRLZ24NSTRL

AUIRLZ24NSTRL 数据手册

与AUIRLZ24NSTRL相关器件

与AUIRLZ24NSTRL相关文章

您还可以找

您在本页遇到什么问题？