5秒后页面跳转
捷配首页

Datasheet > AUIRLZ44Z
AUIRLZ44Z PDF预览

AUIRLZ44Z

更新时间： 2024-11-27 12:52:55
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 221K
描述
AUTOMOTIVE GRADE

阅读下载

中文翻译

获取价格

AUIRLZ44Z 技术参数

是否Rohs认证： 符合生命周期：End Of Life
包装说明：ROHS COMPLIANT, PLASTIC PACKAGE-3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：5.51其他特性：ULTRA-LOW RESISTANCE
雪崩能效等级（Eas）：78 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：55 V
最大漏极电流 (Abs) (ID)：51 A最大漏极电流 (ID)：51 A
最大漏源导通电阻：0.0135 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：80 W
最大脉冲漏极电流 (IDM)：204 A子类别：FET General Purpose Power
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRLZ44Z 数据手册

 浏览型号AUIRLZ44Z的Datasheet PDF文件第2页浏览型号AUIRLZ44Z的Datasheet PDF文件第3页浏览型号AUIRLZ44Z的Datasheet PDF文件第4页浏览型号AUIRLZ44Z的Datasheet PDF文件第5页浏览型号AUIRLZ44Z的Datasheet PDF文件第6页浏览型号AUIRLZ44Z的Datasheet PDF文件第7页 
PD - 97682  
AUTOMOTIVE GRADE  
AUIRLZ44Z  
Features  
HEXFET® Power MOSFET  
●
●
●
●
●
Advanced Process Technology  
UltraLowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to  
Tjmax  
D
V(BR)DSS  
RDS(on) typ.  
55V  
11m  
Ω
G
max.  
ID  
13.5m  
Ω
S
●
●
Lead-Free,RoHSCompliant  
Automotive Qualified *  
51A  
Description  
D
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest  
processing techniques to achieve extremely low on-  
resistance per silicon area. Additional features of  
this design are a 175°C junction operating tempera-  
ture, fast switching speed and improved repetitive  
avalanche rating . These features combine to make  
this design an extremely efficient and reliable device  
for use in Automotive applications and a wide variety  
of other applications.  
S
D
G
TO-220AB  
AUIRLZ44Z  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
51  
Units  
A
Continuous Drain Current, VGS @ 10V  
I
I
I
@ T = 25°C  
C
D
D
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
@ T = 100°C  
C
36  
204  
80  
DM  
P
@T = 25°C  
Power Dissipation  
C
W
D
Linear Derating Factor  
Gate-to-Source Voltage  
0.53  
± 16  
W/°C  
V
V
GS  
EAS(Thermally Limited)  
78  
110  
mJ  
Single Pulse Avalanche Energy  
EAS (tested )  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
IAR  
See Fig.12a, 12b, 15, 16  
A
Repetitive Avalanche Energy  
EAR  
mJ  
T
J
Operating Junction and  
-55 to + 175  
T
Storage Temperature Range  
°C  
STG  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Mounting Torque, 6-32 or M3 screw  
300  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
1.87  
–––  
62  
Units  
RθJC  
Junction-to-Case  
RθCS  
RθJA  
0.50  
–––  
°C/W  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
06/10/11  
1234567...12

中文翻译

下载PDF

AUIRLZ44Z 替代型号

型号 品牌 替代类型 描述 数据表
IRF1010NSTRLPBF INFINEON

功能相似

 Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Met
IRFZ44ZSPBF INFINEON

功能相似

 HEXFET㈢ Power MOSFET ( VDSS = 55V , RDS(on) =

与AUIRLZ44Z相关器件

型号 品牌 获取价格 描述 数据表
AUIRS1170S INFINEON

获取价格

 		AUIRS1170S 是一款通过汽车认证的智能次级侧驱动器 IC，该产品设计用于驱动在隔离
AUIRS2003S INFINEON

获取价格

 		HALF-BRIDGE DRIVER
AUIRS2003STR INFINEON

获取价格

 		Full Bridge Based Peripheral Driver, CMOS, PDSO8, ROHS COMPLIANT, MS-012AA, SOIC-8
AUIRS2004S INFINEON

获取价格

 		Automotive Grade HALF-BRIDGE DRIVER IC Undervoltage lockout
AUIRS2004STR INFINEON

获取价格

 		Automotive Grade HALF-BRIDGE DRIVER IC Undervoltage lockout
AUIRS2012S INFINEON

获取价格

 		High and low side gate driver
AUIRS2012S_15 INFINEON

获取价格

 		High and low side gate driver
AUIRS2012STR INFINEON

获取价格

 		Half Bridge Based Peripheral Driver, 2A, PDSO8, ROHS COMPLIANT, MS-012AA, SOIC-8
AUIRS20161S INFINEON

获取价格

 		One high side output and internal low side Vs recharge.
AUIRS20161STR INFINEON

获取价格

 		Buffer/Inverter Based Peripheral Driver, CMOS, PDSO8, ROHS COMPLIANT, MS-012AA, SOIC-8

与AUIRLZ44Z相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证