5秒后页面跳转
AUIRLU3114Z PDF预览

AUIRLU3114Z

更新时间: 2024-01-10 14:10:09
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
14页 225K
描述
Advanced Process Technology

AUIRLU3114Z 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-251AA
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.24其他特性:AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
雪崩能效等级(Eas):260 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (Abs) (ID):42 A最大漏极电流 (ID):42 A
最大漏源导通电阻:0.0065 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-251AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):140 W
最大脉冲漏极电流 (IDM):500 A子类别:FET General Purpose Power
表面贴装:NO端子面层:MATTE TIN OVER NICKEL
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AUIRLU3114Z 数据手册

 浏览型号AUIRLU3114Z的Datasheet PDF文件第2页浏览型号AUIRLU3114Z的Datasheet PDF文件第3页浏览型号AUIRLU3114Z的Datasheet PDF文件第4页浏览型号AUIRLU3114Z的Datasheet PDF文件第5页浏览型号AUIRLU3114Z的Datasheet PDF文件第6页浏览型号AUIRLU3114Z的Datasheet PDF文件第7页 
PD - 96381  
AUTOMOTIVE GRADE  
AUIRLR3114Z  
AUIRLU3114Z  
HEXFET® Power MOSFET  
Features  
Advanced Process Technology  
D
VDSS  
40V  
UltraLowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Logic Level  
RDS(on) max @ 10V  
max @ 4.5V  
4.9m  
6.5m  
130A  
Ω
Ω
G
ID (Silicon Limited)  
S
l
l
Lead-Free,RoHSCompliant  
Automotive Qualified *  
ID (Package Limited)  
42A  
Description  
D
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest processing  
techniques to achieve extremely low on-resistance per  
silicon area. Additional features of this design are a 175°C  
junction operating temperature, fast switching speed and  
improvedrepetitiveavalancherating.Thesefeaturescom-  
bine to make this design an extremely efficient and reliable  
deviceforuseinAutomotiveapplicationsandawidevariety  
of other applications.  
S
S
D
G
G
I-Pak  
AUIRLU3114Z  
D-Pak  
AUIRLR3114Z  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.Thesearestress  
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications  
is not implied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability. Thethermal  
resistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillairconditions.Ambienttemperature(TA)  
is 25°C, unless otherwise specified.  
Parameter  
Max.  
Units  
130  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
89  
A
42  
500  
140  
Pulsed Drain Current  
PD @TC = 25°C  
W
Power Dissipation  
Linear Derating Factor  
0.95  
±16  
W/°C  
V
VGS  
Gate-to-Source Voltage  
EAS (Thermally limited)  
130  
260  
mJ  
Single Pulse Avalanche Energy  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
E
AS (Tested )  
IAR  
See Fig.12a, 12b, 15, 16  
A
EAR  
TJ  
mJ  
Repetitive Avalanche Energy  
Operating Junction and  
-55 to + 175  
TSTG  
°C  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
300(1.6mm from case)  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
1.05  
40  
Units  
RθJC  
Junction-to-Case  
Rθ  
°C/W  
Junction-to-Ambient (PCB mount)  
Junction-to-Ambient  
JA  
RθJA  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
06/22/11  

与AUIRLU3114Z相关器件

型号 品牌 描述 获取价格 数据表
AUIRLZ24NS INFINEON Power Field-Effect Transistor,

获取价格

AUIRLZ24NSTRL INFINEON 暂无描述

获取价格

AUIRLZ44Z INFINEON AUTOMOTIVE GRADE

获取价格

AUIRS1170S INFINEON AUIRS1170S 是一款通过汽车认证的智能次级侧驱动器 IC,该产品设计用于驱动在隔离

获取价格

AUIRS2003S INFINEON HALF-BRIDGE DRIVER

获取价格

AUIRS2003STR INFINEON Full Bridge Based Peripheral Driver, CMOS, PDSO8, ROHS COMPLIANT, MS-012AA, SOIC-8

获取价格