Datasheet > TTA014

TTA014

更新时间： 2024-11-18 15:19:35

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	451K
描述
PNP Bipolar Transistor, -120 V, -2.5 A, New PW-Mold

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TTA014 数据手册

TTA014

Bipolar Transistors Silicon PNP Epitaxial Type

TTA014

1. Applications

•

High-Speed Switching

•

DC-DC Converters

2. Features

(1) High DC current gain: hFE = 120 to 240 (VCE = -2 V, IC = -0.25 A)

(2) Low collector-emitter saturation voltage: VCE(sat) = -0.35 V (max) (IC = -0.75 A, IB = -75 mA)

(3) High-speed switching: tf = 65 ns (typ.) (IC = -0.75 A)

3. Packaging and Internal Circuit

1. Base

2. Collector (Heatsink)

3. Emitter

New PW-Mold

Start of commercial production

2023-07

Toshiba Electronic Devices & Storage Corporation

2023-08-18

Rev.2.0

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
TTA100D	ETC	获取价格	SINGLE BIDIRECTIONAL BREAKOVER DIODE\|180V V(BO) MAX\|300MA I(S)\|DO-201AD
TTA100S	ETC	获取价格	SINGLE BIDIRECTIONAL BREAKOVER DIODE\|180V V(BO) MAX\|300MA I(S)\|DO-214AB
TTA100T	ETC	获取价格	SINGLE BIDIRECTIONAL BREAKOVER DIODE\|180V V(BO) MAX\|300MA I(S)\|DO-214AB
TTA100Z	ETC	获取价格	SINGLE BIDIRECTIONAL BREAKOVER DIODE\|180V V(BO) MAX\|300MA I(S)\|PILL-B
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TTA145N08A	WUXI UNIGROUP	获取价格	Trench MOS这种新型垂直结构器件在VDMOS的基础上发展起来，和VDMOS相比，T
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TTA150S	ETC	获取价格	SINGLE BIDIRECTIONAL BREAKOVER DIODE\|235V V(BO) MAX\|300MA I(S)\|DO-214AB
TTA150T	ETC	获取价格	SINGLE BIDIRECTIONAL BREAKOVER DIODE\|235V V(BO) MAX\|300MA I(S)\|TO-220AC
TTA150Z	ETC	获取价格	SINGLE BIDIRECTIONAL BREAKOVER DIODE\|235V V(BO) MAX\|300MA I(S)\|PILL-B