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MG50HF12LEC1 PDF预览

MG50HF12LEC1

更新时间: 2024-11-18 15:19:23
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
6页 513K
描述
C1

MG50HF12LEC1 数据手册

 浏览型号MG50HF12LEC1的Datasheet PDF文件第2页浏览型号MG50HF12LEC1的Datasheet PDF文件第3页浏览型号MG50HF12LEC1的Datasheet PDF文件第4页浏览型号MG50HF12LEC1的Datasheet PDF文件第5页浏览型号MG50HF12LEC1的Datasheet PDF文件第6页 
RoHS  
MG50HF12LEC1  
COMPLIANT  
IGBT Modules  
VCES  
IC  
1200V  
50A  
Applications  
High frequency drivers  
Solar inverters  
UPS (Uninterruptible Power Supplies)  
Electric welding machine  
Circuit  
Features  
High speed IGBT in NPT technology  
Low switching losses  
High short circuit capability(10us)  
Including ultra fast & soft recovery anti-parallel  
FWD  
Low inductance  
Absolute Maximum RatingsTC = 25unless otherwise specified)  
Symbol  
VCES  
Description  
Values  
1200  
±20  
Units  
V
Collector - Emitter Voltage  
Gate-Emitter Voltage  
VGES  
V
TC=25  
80  
A
IC  
DC Collector Current  
TC=80℃  
50  
A
ICM(1)  
IF  
Peak Collector Current Repetitive  
Diode Continuous Forward Current  
Maximum Power Dissipation (IGBT)  
Maximum Junction Temperature  
Operating Temperature  
TJ = 125℃  
100  
A
50  
A
TJ = 125  
PD  
TC = 25,TJmax=150℃  
400  
W
TJ  
150  
V
TJOP  
-40 ~ +150  
-40 ~ +125  
3000  
150  
Storage Temperature  
T
stg  
Viso  
Isolation Voltage (All Terminals Shorted)  
Weight Of Module  
f=50Hz, 1min  
Weight  
g
Power Terminals Screw:M5  
Mounting Screw:M6  
2.5~5  
3~5  
N*m  
N*m  
Mounting  
Torque  
Notes :  
(1) Repetitive Rating: Pulse width limited by max. junction temperature  
S-M285  
Rev.1.0, 1-July-19  
www.21yangjie.com  
1

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