Datasheet > MG50HF12LEC1

MG50HF12LEC1

更新时间： 2024-05-24 11:20:37

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
6页	513K
描述
C1

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中文翻译

获取价格

数据手册

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MG50HF12LEC1 数据手册

RoHS

MG50HF12LEC1

COMPLIANT

IGBT Modules

VCES

1200V

50A

Applications



High frequency drivers

Solar inverters

UPS (Uninterruptible Power Supplies)

Electric welding machine

Circuit

Features



High speed IGBT in NPT technology

Low switching losses



High short circuit capability(10us)

Including ultra fast & soft recovery anti-parallel



FWD



Low inductance

Absolute Maximum Ratings（T_C= 25℃ unless otherwise specified）

Symbol

V_CES

Description

Values

1200

±20

Units

Collector - Emitter Voltage

Gate-Emitter Voltage

V_GES

T_C=25℃

I_C

DC Collector Current

T_C=80℃

I_CM(1)

I_F

Peak Collector Current Repetitive

Diode Continuous Forward Current

Maximum Power Dissipation (IGBT)

Maximum Junction Temperature

Operating Temperature

T_J= 125℃

100

T_J= 125℃

P_D

T_C= 25℃,T_Jmax=150℃

400

T_J

150

℃

T_JOP

-40 ~ +150

-40 ~ +125

3000

150

Storage Temperature

stg

Viso

Isolation Voltage (All Terminals Shorted)

Weight Of Module

f=50Hz, 1min

Weight

Power Terminals Screw:M5

Mounting Screw:M6

2.5~5

3~5

N*m

Mounting

Torque

Notes :

(1) Repetitive Rating: Pulse width limited by max. junction temperature

S-M285

Rev.1.0, 1-July-19

www.21yangjie.com

12 3 4 5 6

中文翻译

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