Datasheet > AUIRLZ24NS

AUIRLZ24NS

更新时间： 2024-02-12 13:42:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	296K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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AUIRLZ24NS 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.83

AUIRLZ24NS 数据手册

AUIRLZ24NS

AUIRLZ24NL

AUTOMOTIVE GRADE

HEXFET^®Power MOSFET

Features

Advanced Process Technology

V_DSS

55V

0.06

Logic Level Gate Drive

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

Automotive Qualified *

R_DS(on)max.

I_D

18A

Description

SpecificallydesignedforAutomotiveapplications,thisHEXFET^®

Power MOSFET utilizes the latest processing techniques to

achieveextremelylowon-resistancepersiliconarea. Additional

featuresofthisdesign area175°Cjunctionoperatingtempera-

ture, fast switching speed and improved repetitive avalanche

rating . These features combine to make this design an ex-

tremely efficient and reliable device for use in Automotive

TO-262

AUIRLZ24NL

D²Pak

AUILZ24NS

applications and a wide variety of other applications.

Standard Pack

Form

Tube

Base Part Number

Package Type

Orderable Part Number

Quantity

800

AUIRLZ24NS

AUIRLZ24NSTRL

AUIRLZ24NS

AUIRLZ24NL

D2-Pak

TO-262

Tape and Reel Left

Tube

AUIRLZ24NL

AbsoluteMaximumRatings

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress

ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is

not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal

resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T_A) is

25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

3.8

P_D@T_A= 25°C

Maximum Power Dissipation

Linear Derating Factor

0.30

_D@T_C= 25°C

W/°C

± 16

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

4.5

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery

V/ns

5.0

-55 to + 175

Operating Junction and

°C

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

300

Thermal Resistance

Parameter

Typ.

–––

Max.

3.3

Units

R_θ

Junction-to-Case

°C/W

R_θ

Junction-to-Ambient (PCB Mounted, steady-state)**

–––

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

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