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AUIRLSL4030 PDF预览

AUIRLSL4030

更新时间： 2024-11-24 21:10:59
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
11页 501K
描述
Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN

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AUIRLSL4030 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC, TO-262, 3 PINReach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.76
其他特性：AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE雪崩能效等级（Eas）：305 mJ
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (Abs) (ID)：180 A最大漏极电流 (ID)：180 A
最大漏源导通电阻：0.0043 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-262AAJESD-30 代码：R-PSIP-T3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：370 W
最大脉冲漏极电流 (IDM)：730 A子类别：FET General Purpose Power
表面贴装：NO端子面层：MATTE TIN OVER NICKEL
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRLSL4030 数据手册

 浏览型号AUIRLSL4030的Datasheet PDF文件第2页浏览型号AUIRLSL4030的Datasheet PDF文件第3页浏览型号AUIRLSL4030的Datasheet PDF文件第4页浏览型号AUIRLSL4030的Datasheet PDF文件第5页浏览型号AUIRLSL4030的Datasheet PDF文件第6页浏览型号AUIRLSL4030的Datasheet PDF文件第7页 
AUIRLS4030  
AUIRLSL4030  
AUTOMOTIVE GRADE  
HEXFET® Power MOSFET  
Features  
Optimized for Logic Level Drive  
Advanced Process Technology  
Ultra Low On-Resistance  
Logic Level Gate Drive  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
VDSS  
100V  
RDS(on) typ.  
max  
3.4m  
4.3m  
ID  
180A  
D
D
Description  
Specifically designed for Automotive applications, this HEXFET®  
Power MOSFET utilizes the latest processing techniques to  
achieve extremely low on-resistance per silicon area. Additional  
features of this design are a 175°C junction operating tempera-  
ture, fast switching speed and improved repetitive avalanche rat-  
ing . These features combine to make this design an extremely  
efficient and reliable device for use in Automotive applications and  
a wide variety of other applications.  
S
D
S
G
G
G
Gate  
D
Drain  
S
Source  
Standard Pack  
Form  
Base part number  
Package Type  
Orderable Part Number  
Quantity  
50  
AUIRLSL4030  
TO-262  
Tube  
AUIRLSL4030  
AUIRLS4030  
Tube  
50  
AUIRLS4030  
D2-Pak  
Tape and Reel Left  
800  
AUIRLS4030TRL  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress  
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance  
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless  
otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
180  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
A
130  
730  
PD @TC = 25°C  
Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
370  
2.5  
± 16  
305  
W
W/°C  
V
mJ  
A
VGS  
EAS  
IAR  
Single Pulse Avalanche Energy (Thermally limited)   
Avalanche Current   
See Fig. 14, 15, 22a, 22b  
mJ  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery   
V/ns  
°C  
21  
Operating Junction and  
Storage Temperature Range  
Soldering Temperature for 10 seconds  
-55 to + 175  
TSTG  
300(1.6mm from case)  
Thermal Resistance  
Symbol  
RJC  
RJA  
Parameter  
Typ.  
–––  
–––  
Max.  
0.4  
40  
Units  
Junction-to-Case   
Junction-to-Ambient (PCB Mount), D2 Pak  
°C/W  
HEXFET® is a registered trademark of Infineon.  
*Qualification standards can be found at www.infineon.com  
1
2015-11-6  
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