Datasheet > AUIRLS3114Z

AUIRLS3114Z

更新时间： 2024-11-24 21:15:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	644K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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AUIRLS3114Z 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	ECCN代码：	EAR99
Factory Lead Time：	16 weeks	风险等级：	5.71
配置：	Single	最大漏极电流 (Abs) (ID)：	56 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最高工作温度：	175 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	143 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

AUIRLS3114Z 数据手册

AUTOMOTIVE GRADE

AUIRLS3114Z

HEXFET^®Power MOSFET

Features



Advanced Process Technology

Ultra Low On-Resistance

Logic Level Gate Drive

Enhanced dv/dt and di/dt capability

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

V_DSS

40V

3.8m

4.9m

122A

56A

R_DS(on)typ.

max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

Description

Specifically designed for Automotive applications, this HEXFET®

Power MOSFET utilizes the latest processing techniques to achieve

extremely low on-resistance per silicon area. Additional features of

this design are a 175°C junction operating temperature, fast

switching speed and improved repetitive avalanche rating . These

features combine to make this design an extremely efficient and

reliable device for use in Automotive applications and a wide variety

of other applications.

D²Pak

AUIRLS3114Z

Gate

Drain

Source

Standard Pack

Form

Tube

Base part number

Package Type

Orderable Part Number

Quantity

AUIRLS3114Z

AUIRLS3114ZTRL

AUIRLS3114Z

D²-Pak

Tape and Reel Left

800

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress

ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance

and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless

otherwise specified.

Symbol

Parameter

Max.

Units

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

122

I_D@ T_C= 100°C

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wirebond Limited)

86

I_DM

Pulsed Drain Current 

Maximum Power Dissipation

Linear Derating Factor

488

143

0.95

P_D@T_C= 25°C

W/°C

V_GS

E_AS

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited) 

± 16

168

E_{AS (Tested)}

I_AR

Single Pulse Avalanche Energy (Tested)

Avalanche Current 

518

See Fig.15,16, 12a, 12b

E_AR

Repetitive Avalanche Energy 

Peak Diode Recovery 

dv/dt

T_J

2.3

V/ns

Operating Junction and

-55 to + 175

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds (1.6mm from case)

300

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

Junction-to-Case 

–––

1.05

R_JC

R_JA

°C/W

Junction-to-Ambient (PCB Mount) 

–––

HEXFET® is a registered trademark of Infineon.

*Qualification standards can be found at www.infineon.com

2015-11-6

12 3 4 5 6 7...11

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与AUIRLS3114Z相关器件

型号	品牌	获取价格	描述	数据表
AUIRLS3114ZTRL	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRLS3114ZTRR	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRLS4030	INFINEON	获取价格	HEXFETPower MOSFET
AUIRLS4030-7P	INFINEON	获取价格	HEXFETPower MOSFET
AUIRLS4030-7TRL	INFINEON	获取价格	Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon,
AUIRLS4030-7TRR	INFINEON	获取价格	Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon,
AUIRLS4030TRL	INFINEON	获取价格	Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon,
AUIRLS4030TRR	INFINEON	获取价格	Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon,
AUIRLS8409-7P	INFINEON	获取价格	Power Field-Effect Transistor,
AUIRLS8409-7TRL	INFINEON	获取价格	Power Field-Effect Transistor,

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