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AUIRLS4030TRL

更新时间： 2024-11-24 19:47:47
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
11页 490K
描述
Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3

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AUIRLS4030TRL 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：ROHS COMPLIANT, PLASTIC, D2PAK-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.13
其他特性：AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE雪崩能效等级（Eas）：305 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (Abs) (ID)：180 A
最大漏极电流 (ID)：180 A最大漏源导通电阻：0.0043 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：370 W最大脉冲漏极电流 (IDM)：730 A
子类别：FET General Purpose Power表面贴装：YES
端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRLS4030TRL 数据手册

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AUIRLS4030  
AUIRLSL4030  
AUTOMOTIVE GRADE  
HEXFET® Power MOSFET  
Features  
Optimized for Logic Level Drive  
Advanced Process Technology  
Ultra Low On-Resistance  
Logic Level Gate Drive  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
VDSS  
100V  
RDS(on) typ.  
max  
3.4m  
4.3m  
ID  
180A  
D
D
Description  
Specifically designed for Automotive applications, this HEXFET®  
Power MOSFET utilizes the latest processing techniques to  
achieve extremely low on-resistance per silicon area. Additional  
features of this design are a 175°C junction operating tempera-  
ture, fast switching speed and improved repetitive avalanche rat-  
ing . These features combine to make this design an extremely  
efficient and reliable device for use in Automotive applications and  
a wide variety of other applications.  
S
D
S
G
G
G
Gate  
D
Drain  
S
Source  
Standard Pack  
Form  
Base part number  
Package Type  
Orderable Part Number  
Quantity  
50  
AUIRLSL4030  
TO-262  
Tube  
AUIRLSL4030  
AUIRLS4030  
Tube  
50  
AUIRLS4030  
D2-Pak  
Tape and Reel Left  
800  
AUIRLS4030TRL  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress  
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance  
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless  
otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
180  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
A
130  
730  
PD @TC = 25°C  
Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
370  
2.5  
± 16  
305  
W
W/°C  
V
mJ  
A
VGS  
EAS  
IAR  
Single Pulse Avalanche Energy (Thermally limited)   
Avalanche Current   
See Fig. 14, 15, 22a, 22b  
mJ  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery   
V/ns  
°C  
21  
Operating Junction and  
Storage Temperature Range  
Soldering Temperature for 10 seconds  
-55 to + 175  
TSTG  
300(1.6mm from case)  
Thermal Resistance  
Symbol  
RJC  
RJA  
Parameter  
Typ.  
–––  
–––  
Max.  
0.4  
40  
Units  
Junction-to-Case   
Junction-to-Ambient (PCB Mount), D2 Pak  
°C/W  
HEXFET® is a registered trademark of Infineon.  
*Qualification standards can be found at www.infineon.com  
1
2015-11-6  
1234567...11

中文翻译

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AUIRLS4030TRL 替代型号

型号 品牌 替代类型 描述 数据表
AUIRLS4030 INFINEON

完全替代

 HEXFETPower MOSFET
IRLS4030TRLPBF INFINEON

类似代替

 DC Motor Drive
IRLS4030PBF INFINEON

类似代替

 HEXFET Power MOSFET

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