是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 15 weeks |
风险等级: | 0.84 | 雪崩能效等级(Eas): | 305 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 180 A | 最大漏极电流 (ID): | 180 A |
最大漏源导通电阻: | 0.0043 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-263AB | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 370 W |
最大脉冲漏极电流 (IDM): | 730 A | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
AUIRLS4030TRL | INFINEON |
类似代替 |
Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, | |
AUIRLS4030 | INFINEON |
类似代替 |
HEXFETPower MOSFET | |
IRLS4030PBF | INFINEON |
类似代替 |
HEXFET Power MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRLS510 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 3.6A I(D), 100V, 0.75ohm, 1-Element, N-Channel, Silicon, Me | |
IRLS510A | FAIRCHILD |
获取价格 |
Advanced Power MOSFET | |
IRLS511 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 3.6A I(D), 80V, 0.75ohm, 1-Element, N-Channel, Silicon, Met | |
IRLS520A | FAIRCHILD |
获取价格 |
Advanced Power MOSFET | |
IRLS521 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 5.8A I(D), 80V, 0.4ohm, 1-Element, N-Channel, Silicon, Meta | |
IRLS530 | FAIRCHILD |
获取价格 |
Advanced Power MOSFET | |
IRLS530 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 8.8A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Met | |
IRLS530A | FAIRCHILD |
获取价格 |
Advanced Power MOSFET | |
IRLS540 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 12.7A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, M | |
IRLS540A | FAIRCHILD |
获取价格 |
Advanced Power MOSFET |