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IRLS4030TRLPBF PDF预览

IRLS4030TRLPBF

更新时间: 2024-11-24 12:56:27
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲电机驱动
页数 文件大小 规格书
10页 384K
描述
DC Motor Drive

IRLS4030TRLPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:0.84雪崩能效等级(Eas):305 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):180 A最大漏极电流 (ID):180 A
最大漏源导通电阻:0.0043 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):370 W
最大脉冲漏极电流 (IDM):730 A子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRLS4030TRLPBF 数据手册

 浏览型号IRLS4030TRLPBF的Datasheet PDF文件第2页浏览型号IRLS4030TRLPBF的Datasheet PDF文件第3页浏览型号IRLS4030TRLPBF的Datasheet PDF文件第4页浏览型号IRLS4030TRLPBF的Datasheet PDF文件第5页浏览型号IRLS4030TRLPBF的Datasheet PDF文件第6页浏览型号IRLS4030TRLPBF的Datasheet PDF文件第7页 
PD - 97370  
IRLS4030PbF  
IRLSL4030PbF  
Applications  
l DC Motor Drive  
l High Efficiency Synchronous Rectification in SMPS  
l Uninterruptible Power Supply  
l High Speed Power Switching  
l Hard Switched and High Frequency Circuits  
HEXFET® Power MOSFET  
D
VDSS  
100V  
RDS(on) typ.  
3.4m  
4.3m  
180A  
G
max.  
ID  
S
Benefits  
l Optimized for Logic Level Drive  
l Very Low RDS(ON) at 4.5V VGS  
l Superior R*Q at 4.5V VGS  
l Improved Gate, Avalanche and Dynamic dV/dt  
Ruggedness  
l Fully Characterized Capacitance and Avalanche  
SOA  
l Enhanced body diode dV/dt and dI/dt Capability  
l Lead-Free  
S
S
D
D
G
G
TO-262  
D2Pak  
IRLS4030PbF  
IRLSL4030bF  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Symbol  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current c  
Max.  
180  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
130  
A
730  
PD @TC = 25°C  
370  
W
Maximum Power Dissipation  
Linear Derating Factor  
2.5  
W/°C  
V
VGS  
± 16  
Gate-to-Source Voltage  
21  
Peak Diode Recovery e  
dv/dt  
TJ  
V/ns  
°C  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
300  
Avalanche Characteristics  
Single Pulse Avalanche Energy d  
EAS (Thermally limited)  
305  
mJ  
A
Avalanche Current c  
IAR  
See Fig. 14, 15, 22a, 22b  
Repetitive Avalanche Energy f  
EAR  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
0.40  
40  
Units  
°C/W  
RθJC  
Junction-to-Case jk  
RθJA  
–––  
Junction-to-Ambient (PCB Mount) ij  
www.irf.com  
1
02/12/09  

IRLS4030TRLPBF 替代型号

型号 品牌 替代类型 描述 数据表
AUIRLS4030TRL INFINEON

类似代替

Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon,
AUIRLS4030 INFINEON

类似代替

HEXFETPower MOSFET
IRLS4030PBF INFINEON

类似代替

HEXFET Power MOSFET

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