Datasheet > IRLS610A

IRLS610A

更新时间： 2024-11-20 04:23:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	269K
描述
Advanced Power MOSFET

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IRLS610A 数据手册

IRLS610A

Advanced Power MOSFET

FEATURES

BV_DSS= 200 V

R_DS(on)= 0.046Ω

I_D= 2.5 A

! Avalanche Rugged Technology

! Rugged Gate Oxide Technology

! Lower Input Capacitance

! Improved Gate Charge

! Extended Safe Operating Area

! Lower Leakage Current : 10 μA (Max.) @ V_DS= 200V

! Lower R_DS(ON): 1.185Ω (Typ.)

TO-220F

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Drain-to-Source Voltage

Value

200

2.5

Units

V_DSS

Continuous Drain Current (T_C=25℃)

Continuous Drain Current (T_C=100℃)

Drain Current-Pulsed

I_D

1.6

I_DM

V_GS

E_AS

I_AR

①

Gate-to-Source Voltage

±20

Single Pulsed Avalanche Energy

Avalanche Current

②

①

③

2.9

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation (T_C=25℃)

Linear Derating Factor

1.9

V/ns

5.0

P_D

T_J, T_STG

T_L

0.15

W/℃

Operating Junction and

- 55 to +150

300

Storage Temperature Range

Maximum Lead Temp. for Soldering

℃

Purposes, 1/8＂ from case for 5-seconds

Thermal Resistance

Symbol

Characteristic

Typ.

Max.

6.6

Units

R_θJC

Junction-to-Case

^oC/W

R_θJA

Junction-to-Ambient

62.5

Rev. A

12 3 4 5 6 7

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