Datasheet > IRLSL4030

IRLSL4030

更新时间： 2024-11-25 11:14:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	391K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

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IRLSL4030 数据手册

PD - 97370

IRLS4030PbF

IRLSL4030PbF

Applications

l DC Motor Drive

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

HEXFET^®Power MOSFET

V_DSS

100V

R_DS(on)typ.

3.4m

4.3m

180A

Ω

max.

I_D

Benefits

l Optimized for Logic Level Drive

l Very Low R_DS(ON)at 4.5V V_GS

l Superior R*Q at 4.5V V_GS

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

TO-262

D²Pak

IRLS4030PbF

IRLSL4030bF

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current c

Max.

180

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

130

730

P_D@T_C= 25°C

370

Maximum Power Dissipation

Linear Derating Factor

2.5

W/°C

V_GS

± 16

Gate-to-Source Voltage

Peak Diode Recovery e

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

Avalanche Characteristics

Single Pulse Avalanche Energy d

E_{AS (Thermally limited)}

305

Avalanche Current c

I_AR

See Fig. 14, 15, 22a, 22b

Repetitive Avalanche Energy f

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.40

Units

°C/W

R_θJC

Junction-to-Case jk

R_θJA

–––

Junction-to-Ambient (PCB Mount) ij

www.irf.com

02/12/09

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