IRLS630A

更新时间： 2024-09-15 22:51:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	282K
描述
Advanced Power MOSFET

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IRLS630A 数据手册

IRLS630A

Advanced Power MOSFET

FEATURES

BV_DSS= 200 V

R_DS(on)= 0.4 Ω

I_D= 6.5 A

! Logic-Level Gate Drive

! Avalanche Rugged Technology

! Rugged Gate Oxide Technology

! Lower Input Capacitance

! Improved Gate Charge

TO-220F

! Extended Safe Operating Area

! Lower Leakage Current : 10 μA (Max.) @ V_DS= 200V

! Lower R_DS(ON): 0.335Ω (Typ.)

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Drain-to-Source Voltage

Value

200

6.5

4.1

Units

V_DSS

Continuous Drain Current (T_C=25℃)

Continuous Drain Current (T_C=100℃)

Drain Current-Pulsed

I_D

I_DM

V_GS

E_AS

I_AR

①

Gate-to-Source Voltage

±20

Single Pulsed Avalanche Energy

Avalanche Current

②

①

③

6.5

3.6

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation (T_C=25℃)

Linear Derating Factor

V/ns

P_D

T_J, T_STG

T_L

0.29

W/℃

Operating Junction and

- 55 to +150

300

Storage Temperature Range

Maximum Lead Temp. for Soldering

℃

Purposes, 1/8＂ from case for 5-seconds

Thermal Resistance

Symbol

Characteristic

Typ.

Max.

3.47

62.5

Units

R_θJC

Junction-to-Case

^oC/W

R_θJA

Junction-to-Ambient

Rev. A

12 3 4 5 6 7

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