生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 其他特性: | LOGIC LEVEL COMPATIBLE |
外壳连接: | ISOLATED | 配置: | SINGLE |
最小漏源击穿电压: | 50 V | 最大漏极电流 (ID): | 6.5 A |
最大漏源导通电阻: | 0.3 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRLSZ14 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 6.5A I(D), 60V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta | |
IRLSZ14A | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
IRLSZ20 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 10.3A I(D), 50V, 0.15ohm, 1-Element, N-Channel, Silicon, Me | |
IRLSZ24 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 10.3A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Me | |
IRLSZ24A | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 14A I(D) | TO-220AB | |
IRLSZ30 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta | |
IRLSZ34 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta | |
IRLSZ34A | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-220AB | |
IRLSZ40 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 23A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Meta | |
IRLSZ44 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 23A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Meta |