5秒后页面跳转
IRLU014(2350) PDF预览

IRLU014(2350)

更新时间: 2024-09-15 23:59:43
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
10页 113K
描述
HEXFET Power MOSFET(110.86 k)

IRLU014(2350) 数据手册

 浏览型号IRLU014(2350)的Datasheet PDF文件第2页浏览型号IRLU014(2350)的Datasheet PDF文件第3页浏览型号IRLU014(2350)的Datasheet PDF文件第4页浏览型号IRLU014(2350)的Datasheet PDF文件第5页浏览型号IRLU014(2350)的Datasheet PDF文件第6页浏览型号IRLU014(2350)的Datasheet PDF文件第7页 
PD- 94350  
IRLR/U014N  
HEXFET® Power MOSFET  
Logic-Level Gate Drive  
Surface Mount (IRLR024N)  
Straight Lead (IRLU024N)  
Advanced Process Technology  
Fast Switching  
D
VDSS = 55V  
R
DS(on) = 0.14Ω  
G
Fully Avalanche Rated  
ID = 10A  
S
Description  
Fifth Generation HEXFETs from International Rectifier utilize advanced  
processing techniques to achieve the lowest possible on-resistance per  
silicon area. This benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET Power MOSFETs are well known for,  
provides the designer with an extremely efficient device for use in a wide  
variety of applications.  
D-Pak  
TO-252AA  
I-Pak  
TO-251AA  
The D-PAK is designed for surface mounting using vapor phase, infrared, or  
wave soldering techniques. The straight lead version (IRFU series) is for  
through-hole mounting applications. Power dissipation levels up to 1.5 watts  
are possible in typical surface mount applications.  
Absolute Maximum Ratings  
Parameter  
Max.  
10  
Units  
ID @ TC = 25°C  
D @ TC = 100°C  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current ꢁ  
I
7.1  
40  
A
IDM  
PD @TC = 25°C  
Power Dissipation  
28  
W
W/°C  
V
Linear Derating Factor  
0.2  
± 16  
35  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
Single Pulse Avalanche Energyꢂ  
Avalanche Currentꢁ  
mJ  
A
6.0  
2.8  
5.0  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energyꢁ  
Peak Diode Recovery dv/dt ꢃ  
Operating Junction and  
mJ  
V/ns  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
–––  
–––  
Max.  
5.3  
50  
Units  
RθJC  
RθJA  
RθJA  
Case-to-Ambient (PCB mount)**  
Junction-to-Ambient  
°C/W  
110  
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .  
For recommended footprint and soldering techniques refer to application note #AN-994  
www.irf.com  
1
5/4/99  

与IRLU014(2350)相关器件

型号 品牌 获取价格 描述 数据表
IRLU014A ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 8.2A I(D) | TO-251AA
IRLU014N INFINEON

获取价格

HEXFET Power MOSFET
IRLU014NPBF INFINEON

获取价格

HEXFET POWER MOSFET ( VDSS = 55V , RDS(on) =
IRLU014PBF VISHAY

获取价格

Power MOSFET
IRLU020 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 14A I(D) | TO-251
IRLU024 VISHAY

获取价格

Power MOSFET
IRLU024A ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-251AA
IRLU024N INFINEON

获取价格

HEXFET Power MOSFET
IRLU024NPBF INFINEON

获取价格

HEXFET Power MOSFET
IRLU024PBF VISHAY

获取价格

Power MOSFET