PD- 94350
IRLR/U014N
HEXFET® Power MOSFET
ꢀ Logic-Level Gate Drive
ꢀ Surface Mount (IRLR024N)
ꢀ Straight Lead (IRLU024N)
ꢀ Advanced Process Technology
ꢀ Fast Switching
D
VDSS = 55V
R
DS(on) = 0.14Ω
G
ꢀ Fully Avalanche Rated
ID = 10A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
D-Pak
TO-252AA
I-Pak
TO-251AA
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter
Max.
10
Units
ID @ TC = 25°C
D @ TC = 100°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ꢁ
I
7.1
40
A
IDM
PD @TC = 25°C
Power Dissipation
28
W
W/°C
V
Linear Derating Factor
0.2
± 16
35
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energyꢂ
Avalanche Currentꢁ
mJ
A
6.0
2.8
5.0
EAR
dv/dt
TJ
Repetitive Avalanche Energyꢁ
Peak Diode Recovery dv/dt ꢃ
Operating Junction and
mJ
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
–––
–––
Max.
5.3
50
Units
RθJC
RθJA
RθJA
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
°C/W
110
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
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