是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | IN-LINE, R-PSIP-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.14 |
Is Samacsys: | N | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 85 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 10 A | 最大漏源导通电阻: | 0.225 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-251AA |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e0 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | 245 | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 35 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRLU120NPBF | INFINEON |
功能相似 |
Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Me | |
RFD7N10LE | INTERSIL |
功能相似 |
7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRLU120NPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Me | |
IRLU120PBF | VISHAY |
获取价格 |
Power MOSFET | |
IRLU121 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 7.9A I(D), 80V, 0.4ohm, 1-Element, N-Channel, Silicon, Meta | |
IRLU130 | FAIRCHILD |
获取价格 |
Advanced Power MOSFET | |
IRLU130A | FAIRCHILD |
获取价格 |
Advanced Power MOSFET | |
IRLU130ATU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Met | |
IRLU210 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal | |
IRLU210A | FAIRCHILD |
获取价格 |
ADVANCED POWER MOSFET | |
IRLU210ATU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met | |
IRLU211 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2A I(D) | TO-251 |