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IRLU120N PDF预览

IRLU120N

更新时间: 2024-11-19 22:23:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
10页 175K
描述
Power MOSFET(Vdss=100V, Rds(on)=0.185ohm, Id=10A)

IRLU120N 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.14
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):85 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):10 A最大漏源导通电阻:0.225 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-251AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e0
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):245极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):35 A认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRLU120N 数据手册

 浏览型号IRLU120N的Datasheet PDF文件第2页浏览型号IRLU120N的Datasheet PDF文件第3页浏览型号IRLU120N的Datasheet PDF文件第4页浏览型号IRLU120N的Datasheet PDF文件第5页浏览型号IRLU120N的Datasheet PDF文件第6页浏览型号IRLU120N的Datasheet PDF文件第7页 
PD - 91541B  
IRLR/U120N  
HEXFET® Power MOSFET  
Surface Mount (IRLR120N)  
Straight Lead (IRLU120N)  
Advanced Process Technology  
Fast Switching  
D
VDSS = 100V  
RDS(on) = 0.185Ω  
Fully Avalanche Rated  
G
ID = 10A  
Description  
S
Fifth Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve the  
lowest possible on-resistance per silicon area. This  
benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET Power  
MOSFETs are well known for, provides the designer  
with an extremely efficient device for use in a wide  
variety of applications.  
The D-PAK is designed for surface mounting using  
vapor phase, infrared, or wave soldering techniques.  
The straight lead version (IRFU series) is for through-  
hole mounting applications. Power dissipation levels  
up to 1.5 watts are possible in typical surface mount  
applications.  
D -PAK  
TO -252AA  
I-PAK  
TO -251AA  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
10  
7.0  
35  
A
PD @TC = 25°C  
Power Dissipation  
48  
W
W/°C  
V
Linear Derating Factor  
0.32  
± 16  
85  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
6.0  
4.8  
5.0  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Operating Junction and  
mJ  
V/ns  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
–––  
–––  
Max.  
3.1  
50  
Units  
°C/W  
1
RθJC  
RθJA  
Junction-to-Ambient (PCB mount) **  
Junction-to-Ambient  
RθJA  
110  
www.irf.com  
5/11/98  

IRLU120N 替代型号

型号 品牌 替代类型 描述 数据表
IRLU120NPBF INFINEON

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