IRLU024Z

更新时间： 2024-11-19 22:18:31

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
11页	216K
描述
AUTOMOTIVE MOSFET

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中文翻译

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数据手册

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IRLU024Z 数据手册

PD - 95825A

IRLR024Z

AUTOMOTIVE MOSFET

IRLU024Z

HEXFET^®Power MOSFET

Features

n Logic Level

V_DSS= 55V

n Advanced Process Technology

n UltraLowOn-Resistance

n 175°COperatingTemperature

n Fast Switching

R_DS(on)= 58mΩ

n Repetitive Avalanche Allowed up to Tjmax

I_D= 16A

Description

Specifically designed for Automotive applications, this HEXFET^®

Power MOSFET utilizes the latest processing techniques to

achieve extremely low on-resistance per silicon area. Additional

features of this design are a 175°C junction operating tempera-

ture, fast switching speed and improved repetitive avalanche

rating . These features combine to make this design an extremely

efficientandreliabledeviceforuseinAutomotiveapplicationsand

a wide variety of other applications.

D-Pak

IRLR024Z

I-Pak

IRLU024Z

Absolute Maximum Ratings

Parameter

Max.

Units

(Silicon Limited)

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 25°C

@ T = 100°C

@T = 25°C Power Dissipation

W/°C

Linear Derating Factor

0.23

± 16

Gate-to-Source Voltage

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

_AS(Tested )

Single Pulse Avalanche Energy Tested Value

Avalanche Current

I_AR

See Fig.12a, 12b, 15, 16

E_AR

Repetitive Avalanche Energy

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

STG

300 (1.6mm from case )

Thermal Resistance

Parameter

Typ.

–––

Max.

4.28

Units

R_θ

Junction-to-Case

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

°C/W

110

HEXFET^®isaregisteredtrademarkofInternationalRectifier.

www.irf.com

06/21/04

12 3 4 5 6 7...11

中文翻译

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