5秒后页面跳转
IRLU014PBF PDF预览

IRLU014PBF

更新时间: 2024-11-20 05:39:31
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲高压PC
页数 文件大小 规格书
8页 2167K
描述
Power MOSFET

IRLU014PBF 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-251包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:0.64Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:186881
Samacsys Pin Count:3Samacsys Part Category:MOSFET (N-Channel)
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-251AA (HIGH VOLTAGE)
Samacsys Released Date:2019-09-29 09:44:38Is Samacsys:N
其他特性:LOGIC LEVEL COMPATIBLE雪崩能效等级(Eas):27.4 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):7.7 A
最大漏极电流 (ID):7.7 A最大漏源导通电阻:0.2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-251
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):25 W最大脉冲漏极电流 (IDM):31 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRLU014PBF 数据手册

 浏览型号IRLU014PBF的Datasheet PDF文件第2页浏览型号IRLU014PBF的Datasheet PDF文件第3页浏览型号IRLU014PBF的Datasheet PDF文件第4页浏览型号IRLU014PBF的Datasheet PDF文件第5页浏览型号IRLU014PBF的Datasheet PDF文件第6页浏览型号IRLU014PBF的Datasheet PDF文件第7页 
IRLR014, IRLU014, SiHLR014, SiHLU014  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
60  
Available  
• Surface Mount (IRLR014/SiHLR014)  
0.20  
RDS(on) (Ω)  
Qg (Max.) (nC)  
Qgs (nC)  
VGS = 5.0 V  
RoHS*  
• Straight Lead (IRLU014/SiHLU014)  
8.4  
3.5  
COMPLIANT  
• Available in Tape and Reel  
• Logic-Level Gate Drive  
• RDS(on) Specified at VGS = 4 V and 5 V  
• Fast Switching  
Q
gd (nC)  
6.0  
Configuration  
Single  
D
• Lead (Pb)-free Available  
DPAK  
(TO-252)  
IPAK  
(TO-251)  
DESCRIPTION  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
The DPAK is designed for surface mounting using vapor  
phase, infrared, or wave soldering techniques. The straight  
G
S
N-Channel MOSFET  
lead version (IRFU/SiHFU series) is for through-hole  
mounting applications. Power dissipation levels up to 1.5 W  
are possible in typical surface mount applications.  
ORDERING INFORMATION  
Package  
DPAK (TO-252)  
DPAK (TO-252)  
DPAK (TO-252)  
IRLR014TRLPbFa  
SiHLR014TL-E3a  
IRLR014TRLa  
IPAK (TO-251)  
IRLU014PbF  
SiHLU014-E3  
IRLU014  
IRLR014PbF  
SiHLR014-E3  
IRLR014  
IRLR014TRPbFa  
SiHLR014T-E3a  
IRLR014TRa  
Lead (Pb)-free  
SnPb  
SiHLR014  
SiHLR014Ta  
SiHLR014TLa  
SiHLU014  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
60  
10  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
TC = 25 °C  
TC =100°C  
7.7  
4.9  
Continuous Drain Current  
VGS at 5.0 V  
ID  
A
Pulsed Drain Currenta  
IDM  
31  
Linear Derating Factor  
0.20  
0.020  
47  
W/°C  
mJ  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Maximum Power Dissipation  
Maximum Power Dissipation (PCB Mount)e  
Peak Diode Recovery dV/dtc  
EAS  
PD  
T
C = 25 °C  
25  
W
TA = 25 °C  
2.5  
dV/dt  
4.5  
V/ns  
°C  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
TJ, Tstg  
- 55 to + 150  
260d  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V, starting TJ = 25 °C, L = 924 µH, RG = 25 Ω, IAS = 7.7 A (see fig. 12).  
c. ISD 10 A, dI/dt 90 A/µs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
e. When mounted on 1" square PCB (FR-4 or G-10 material).  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91321  
S-Pending-Rev. A, 21-Jul-08  
www.vishay.com  
1
WORK-IN-PROGRESS  

IRLU014PBF 替代型号

型号 品牌 替代类型 描述 数据表
RFD14N05L FAIRCHILD

功能相似

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

与IRLU014PBF相关器件

型号 品牌 获取价格 描述 数据表
IRLU020 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 14A I(D) | TO-251
IRLU024 VISHAY

获取价格

Power MOSFET
IRLU024A ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-251AA
IRLU024N INFINEON

获取价格

HEXFET Power MOSFET
IRLU024NPBF INFINEON

获取价格

HEXFET Power MOSFET
IRLU024PBF VISHAY

获取价格

Power MOSFET
IRLU024Z INFINEON

获取价格

AUTOMOTIVE MOSFET
IRLU024ZPBF INFINEON

获取价格

AUTOMOTIVE MOSFET
IRLU034A ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 23A I(D) | TO-251AA
IRLU110 VISHAY

获取价格

Power MOSFET