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IRLTS6342 PDF预览

IRLTS6342

更新时间: 2024-11-21 14:54:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 252K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

IRLTS6342 数据手册

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PD - 97730  
IRLTS6342PbF  
HEXFET® Power MOSFET  
VDS  
VGS  
30  
12  
V
V
±
D
1
2
3
6
5
4
D
D
RDS(on) max  
(@VGS = 4.5V)  
RDS(on) max  
(@VGS = 2.5V)  
Qg (typical)  
ID  
17.5  
m
Ω
Ω
D
22.0  
11  
m
G
S
nC  
A
TSOP-6  
8.3  
(@TA = 25°C)  
Applications  
System/Load Switch  
FeaturesandBenefits  
Features  
Resulting Benefits  
Industry-Standard TSOP-6 Package  
Multi-Vendor Compatibility  
RoHS Compliant Containing no Lead, no Bromide and no Halogen  
MSL1, Consumer Qualification  
Environmentally Friendlier  
Increased Reliability  
Orderable part number  
Package Type  
Standard Pack  
Form  
Tape and Reel  
Note  
Quantity  
3000  
IRLTS6342TRPBF  
TSOP-6  
Absolute Maximum Ratings  
Max.  
30  
Parameter  
Drain-to-Source Voltage  
Units  
VDS  
V
±12  
Gate-to-Source Voltage  
V
GS  
Continuous Drain Current, VGS @ 4.5V  
Continuous Drain Current, VGS @ 4.5V  
Pulsed Drain Current  
8.3  
6.7  
64  
I
I
I
@ TA = 25°C  
D
D
A
@ TA = 70°C  
DM  
2.0  
Power Dissipation  
P
P
@TA = 25°C  
@TA = 70°C  
D
D
W
W/°C  
°C  
1.3  
Power Dissipation  
0.02  
Linear Derating Factor  
Operating Junction and  
-55 to + 150  
T
T
J
Storage Temperature Range  
STG  
Notes  through „ are on page 2  
www.irf.com  
1
9/27/11  

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