Datasheet > 晶体管 > 功率场效应晶体管> IRLSL3034PBF

IRLSL3034PBF

更新时间： 2024-11-20 05:39:31

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
10页	373K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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IRLSL3034PBF 数据手册

PD -97364A

IRLS3034PbF

IRLSL3034PbF

HEXFET^®Power MOSFET

Applications

l DC Motor Drive

V_DSS

R_DS(on)typ.

max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

40V

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

1.4m

1.7m

343A

195A

Benefits

l Optimized for Logic Level Drive

l Very Low R_DS(ON)at 4.5V V_GS

l Superior R*Q at 4.5V V_GS

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

D²Pak

IRLS3034PbF

TO-262

IRLSL3034PbF

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

Parameter

Max.

343

243

195

1372

375

2.5

Units

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

±20

4.6

Gate-to-Source Voltage

Peak Diode Recovery

dv/dt

T_J

V/ns

Operating Junction and

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

°C

300

10lbf in (1.1N m)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

255

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.4

Units

R_θJC

Junction-to-Case

°C/W

R_θJA

–––

Junction-to-Ambient (PCB Mount)

www.irf.com

07/02/09

12 3 4 5 6 7...10

中文翻译

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