型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRLSL3034PBF | INFINEON |
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HEXFET Power MOSFET | |
IRLSL3036PBF | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRLSL4030 | INFINEON |
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The StrongIRFET™ power MOSFET family is optim | |
IRLSL4030PBF | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRLSZ10 | SAMSUNG |
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Power Field-Effect Transistor, 6.5A I(D), 50V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta | |
IRLSZ14 | SAMSUNG |
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Power Field-Effect Transistor, 6.5A I(D), 60V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta | |
IRLSZ14A | SAMSUNG |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
IRLSZ20 | SAMSUNG |
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Power Field-Effect Transistor, 10.3A I(D), 50V, 0.15ohm, 1-Element, N-Channel, Silicon, Me | |
IRLSZ24 | SAMSUNG |
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Power Field-Effect Transistor, 10.3A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Me | |
IRLSZ24A | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 14A I(D) | TO-220AB |