IRLS530

更新时间： 2024-11-19 22:51:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管开关局域网
页数	文件大小	规格书
7页	259K
描述
Advanced Power MOSFET

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中文翻译

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数据手册

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IRLS530 数据手册

IRLS530A

Advanced Power MOSFET

FEATURES

BV_DSS= 100 V

R_DS(on)= 0.12Ω

I_D= 10.7 A

n Avalanche Rugged Technology

n Rugged Gate Oxide Technology

n Lower Input Capacitance

n Improved Gate Charge

n Extended Safe Operating Area

n Lower Leakage Current : 10µA (Max.) @ V_DS= 100V

n Lower R_DS(ON): 0.101Ω (Typ.)

TO-220F

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Drain-to-Source Voltage

Value

100

10.7

7.5

Units

V_DSS

Continuous Drain Current (T_C=25℃)

Continuous Drain Current (T_C=100℃)

Drain Current-Pulsed

I_D

I_DM

V_GS

E_AS

I_AR

①

Gate-to-Source Voltage

±20

228

10.7

3.6

Single Pulsed Avalanche Energy

Avalanche Current

②

①

③

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation (T_C=25℃)

Linear Derating Factor

V/ns

6.5

P_D

T_J, T_STG

T_L

0.24

W/℃

Operating Junction and

- 55 to +175

300

Storage Temperature Range

Maximum Lead Temp. for Soldering

℃

Purposes, 1/8” from case for 5-seconds

Thermal Resistance

Symbol

Characteristic

Typ.

Max.

4.2

Units

R_θJC

Junction-to-Case

^oC/W

R_θJA

Junction-to-Ambient

62.5

Rev. A

12 3 4 5 6 7

中文翻译

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与IRLS530相关器件

型号	品牌	获取价格	描述	数据表
IRLS530A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRLS540	SAMSUNG	获取价格	Power Field-Effect Transistor, 12.7A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, M
IRLS540A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRLS610	SAMSUNG	获取价格	Power Field-Effect Transistor, 2.1A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Met
IRLS610A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRLS611	SAMSUNG	获取价格	Power Field-Effect Transistor, 2.1A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Met
IRLS620	SAMSUNG	获取价格	Power Field-Effect Transistor, 3.3A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
IRLS620A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRLS621	SAMSUNG	获取价格	Power Field-Effect Transistor, 3.3A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
IRLS624	SAMSUNG	获取价格	Power Field-Effect Transistor, 3.2A I(D), 250V, 1.3ohm, 1-Element, N-Channel, Silicon, Met