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AUIRLS3114ZTRR

更新时间： 2024-11-24 21:09:55
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 240K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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AUIRLS3114ZTRR 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：compliant风险等级：5.71
配置：Single最大漏极电流 (Abs) (ID)：56 A
FET 技术：METAL-OXIDE SEMICONDUCTOR工作模式：ENHANCEMENT MODE
最高工作温度：175 °C极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：143 W子类别：FET General Purpose Power
表面贴装：YESBase Number Matches：1

AUIRLS3114ZTRR 数据手册

 浏览型号AUIRLS3114ZTRR的Datasheet PDF文件第2页浏览型号AUIRLS3114ZTRR的Datasheet PDF文件第3页浏览型号AUIRLS3114ZTRR的Datasheet PDF文件第4页浏览型号AUIRLS3114ZTRR的Datasheet PDF文件第5页浏览型号AUIRLS3114ZTRR的Datasheet PDF文件第6页浏览型号AUIRLS3114ZTRR的Datasheet PDF文件第7页 
AUTOMOTIVE GRADE  
AUIRLS3114Z  
HEXFET® Power MOSFET  
Features  
l
l
l
l
l
l
l
l
l
Advanced Process Technology  
VDSS  
RDS(on) typ.  
max.  
40V  
D
Ultra Low On-Resistance  
Logic Level Gate Drive  
EnhanceddV/dTanddI/dTcapability  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
AutomotiveQualified*  
3.8m  
4.9m  
122A  
Ω
Ω
G
ID  
(Silicon Limited)  
S
ID  
56A  
(Wirebond Limited)  
Description  
Specifically designed for Automotive applications, this HEXFET®  
PowerMOSFETutilizesthelatestprocessingtechniquestoachieve  
extremelylowon-resistancepersiliconarea. Additionalfeaturesof  
thisdesign area175°Cjunctionoperatingtemperature,fastswitch-  
ingspeedandimprovedrepetitiveavalancherating.Thesefeatures  
combine to make this design an extremely efficient and reliable  
deviceforuseinAutomotiveapplicationsandawidevarietyofother  
applications.  
S
D
G
D2Pak  
AUIRLS3114Z  
G
Gate  
D
S
Drain  
Source  
Standard Pack  
Form  
Base Part Number  
Package Type  
Orderable Part Number  
Quantity  
Tube  
50  
800  
800  
AUIRLS3114Z  
AUIRLS3114ZTRL  
AUIRLS3114ZTRR  
AUIRLS3114Z  
D2-Pak  
Tape and Reel Left  
Tape and Reel Right  
AbsoluteMaximumRatings  
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice. Thesearestressratingsonly;andfunctional  
operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated  
conditionsforextendedperiodsmayaffectdevicereliability.Thethermalresistanceandpowerdissipationratingsaremeasuredunderboardmountedand  
still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
122  
86  
Units  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)  
A
ID @ TC = 25°C  
IDM  
Continuous Drain Current, VGS @ 10V (Wirebond Limited)  
Pulsed Drain Current  
56  
488  
143  
0.95  
± 20  
168  
518  
PD @TC = 25°C  
W
Maximum Power Dissipation  
Linear Derating Factor  
W/°C  
V
VGS  
Gate-to-Source Voltage  
EAS (Thermally Limited)  
Single Pulse Avalanche Energy  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
EAS (Tested)  
IAR  
A
See Fig. 12a, 12b, 15, 16  
EAR  
mJ  
Repetitive Avalanche Energy  
Peak Diode Recovery  
2.3  
dv/dt  
TJ  
V/ns  
-55 to + 175  
Operating Junction and  
TSTG  
°C  
Storage Temperature Range  
Soldering Temperature, for 10 seconds (1.6mm from case)  
300  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
1.05  
40  
Units  
Rθ  
Junction-to-Case  
JC  
°C/W  
Rθ  
–––  
Junction-to-Ambient (PCB Mount)  
JA  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
1
www.irf.com © 2014 International Rectifier  
Submit Datasheet Feedback  
March 03, 2014  
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