5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率场效应晶体管> AUIRLS4030-7TRL
AUIRLS4030-7TRL PDF预览

AUIRLS4030-7TRL

更新时间： 2024-11-27 13:05:43
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
12页 739K
描述
Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7

阅读下载

中文翻译

获取价格

AUIRLS4030-7TRL 技术参数

是否Rohs认证：符合生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G6Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：5.12Is Samacsys：N
其他特性：AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY雪崩能效等级（Eas）：320 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (Abs) (ID)：190 A
最大漏极电流 (ID)：190 A最大漏源导通电阻：0.0039 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSSO-G6
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：6
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：370 W
最大脉冲漏极电流 (IDM)：750 A子类别：FET General Purpose Power
表面贴装：YES端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRLS4030-7TRL 数据手册

 浏览型号AUIRLS4030-7TRL的Datasheet PDF文件第2页浏览型号AUIRLS4030-7TRL的Datasheet PDF文件第3页浏览型号AUIRLS4030-7TRL的Datasheet PDF文件第4页浏览型号AUIRLS4030-7TRL的Datasheet PDF文件第5页浏览型号AUIRLS4030-7TRL的Datasheet PDF文件第6页浏览型号AUIRLS4030-7TRL的Datasheet PDF文件第7页 
PD - 96395A  
AUTOMOTIVE GRADE  
AUIRFS3107-7P  
HEXFET® Power MOSFET  
Features  
Advanced Process Technology  
D
VDSS  
75V  
UltraLowOn-Resistance  
Enhanced dV/dT and dI/dT capability  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
RDS(on) typ.  
2.1m  
2.6m  
260A  
Ω
Ω
max.  
ID (Silicon Limited)  
ID (Package Limited)  
G
240A  
S
Description  
D
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest processing  
techniquestoachieveextremelylowon-resistancepersilicon  
area. Additional features of this design are a 175°C junction  
operating temperature, fast switching speed and improved  
repetitiveavalancherating. Thesefeaturescombinetomake  
this design an extremely efficient and reliable device for use  
in Automotive applications and a wide variety of other  
applications.  
S
S
S
S
S
G
D2Pak 7 Pin  
AUIRFS3107-7P  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are  
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the  
specificationsisnotimplied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability.  
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient  
temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
260  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
190  
A
240  
1060  
PD @TC = 25°C  
W
370  
Maximum Power Dissipation  
2.5  
Linear Derating Factor  
W/°C  
V
VGS  
EAS  
IAR  
± 20  
320  
Gate-to-Source Voltage  
mJ  
A
Single Pulse Avalanche Energy (Thermally Limited)  
Avalanche Current  
See Fig. 14, 15, 22a, 22b  
EAR  
mJ  
Repetitive Avalanche Energy  
13  
Peak Diode Recovery  
dv/dt  
TJ  
V/ns  
-55 to + 175  
Operating Junction and  
TSTG  
°C  
Storage Temperature Range  
300  
Soldering Temperature, for 10 seconds (1.6mm from case)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.40  
40  
Units  
°C/W  
Rθ  
Junction-to-Case  
JC  
RθJA  
–––  
Junction-to-Ambient (PCB Mount)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
11/1/11  
1234567...12

中文翻译

下载PDF

AUIRLS4030-7TRL 替代型号

型号 品牌 替代类型 描述 数据表
AUIRLS4030-7P INFINEON

完全替代

 HEXFETPower MOSFET
AUIRLS4030-7TRR INFINEON

类似代替

 Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon,
IRLS4030-7PPBF INFINEON

类似代替

 HEXFET Power MOSFET

与AUIRLS4030-7TRL相关器件

型号 品牌 获取价格 描述 数据表
AUIRLS4030-7TRR INFINEON

获取价格

 		Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon,
AUIRLS4030TRL INFINEON

获取价格

 		Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon,
AUIRLS4030TRR INFINEON

获取价格

 		Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon,
AUIRLS8409-7P INFINEON

获取价格

 		Power Field-Effect Transistor,
AUIRLS8409-7TRL INFINEON

获取价格

 		Power Field-Effect Transistor,
AUIRLSL4030 INFINEON

获取价格

 		Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon,
AUIRLU024N INFINEON

获取价格

 		Advanced Planar Technology Low On-Resistance Fully Avalanche Rated
AUIRLU024Z INFINEON

获取价格

 		Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Met
AUIRLU2905 INFINEON

获取价格

 		Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
AUIRLU3110Z INFINEON

获取价格

 		AUTOMOTIVE GRADE

与AUIRLS4030-7TRL相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证