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AUIRLS4030-7TRR PDF预览

AUIRLS4030-7TRR

更新时间： 2024-11-24 13:05:43
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
12页 739K
描述
Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7

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AUIRLS4030-7TRR 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PSSO-G6Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.13
其他特性：AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY雪崩能效等级（Eas）：320 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (Abs) (ID)：190 A
最大漏极电流 (ID)：190 A最大漏源导通电阻：0.0039 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSSO-G6
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：6
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：370 W
最大脉冲漏极电流 (IDM)：750 A子类别：FET General Purpose Power
表面贴装：YES端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRLS4030-7TRR 数据手册

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PD - 96395A  
AUTOMOTIVE GRADE  
AUIRFS3107-7P  
HEXFET® Power MOSFET  
Features  
Advanced Process Technology  
D
VDSS  
75V  
UltraLowOn-Resistance  
Enhanced dV/dT and dI/dT capability  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
RDS(on) typ.  
2.1m  
2.6m  
260A  
Ω
Ω
max.  
ID (Silicon Limited)  
ID (Package Limited)  
G
240A  
S
Description  
D
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest processing  
techniquestoachieveextremelylowon-resistancepersilicon  
area. Additional features of this design are a 175°C junction  
operating temperature, fast switching speed and improved  
repetitiveavalancherating. Thesefeaturescombinetomake  
this design an extremely efficient and reliable device for use  
in Automotive applications and a wide variety of other  
applications.  
S
S
S
S
S
G
D2Pak 7 Pin  
AUIRFS3107-7P  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are  
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the  
specificationsisnotimplied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability.  
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient  
temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
260  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
190  
A
240  
1060  
PD @TC = 25°C  
W
370  
Maximum Power Dissipation  
2.5  
Linear Derating Factor  
W/°C  
V
VGS  
EAS  
IAR  
± 20  
320  
Gate-to-Source Voltage  
mJ  
A
Single Pulse Avalanche Energy (Thermally Limited)  
Avalanche Current  
See Fig. 14, 15, 22a, 22b  
EAR  
mJ  
Repetitive Avalanche Energy  
13  
Peak Diode Recovery  
dv/dt  
TJ  
V/ns  
-55 to + 175  
Operating Junction and  
TSTG  
°C  
Storage Temperature Range  
300  
Soldering Temperature, for 10 seconds (1.6mm from case)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.40  
40  
Units  
°C/W  
Rθ  
Junction-to-Case  
JC  
RθJA  
–––  
Junction-to-Ambient (PCB Mount)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
11/1/11  
1234567...12

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AUIRLS4030-7TRR 替代型号

型号 品牌 替代类型 描述 数据表
AUIRLS4030-7TRL INFINEON

类似代替

 Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon,
AUIRLS4030-7P INFINEON

类似代替

 HEXFETPower MOSFET
IRLS4030-7PPBF INFINEON

类似代替

 HEXFET Power MOSFET

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