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AUIRLS3036-7P PDF预览

AUIRLS3036-7P

更新时间： 2024-11-24 12:53:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
12页 250K
描述
AUTOMOTIVE GRADE

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中文翻译

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AUIRLS3036-7P 技术参数

是否Rohs认证： 符合生命周期：Not Recommended
包装说明：ROHS COMPLIANT, PLASTIC, D2PAK-7Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：5.25其他特性：AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
雪崩能效等级（Eas）：300 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：60 V
最大漏极电流 (Abs) (ID)：240 A最大漏极电流 (ID)：240 A
最大漏源导通电阻：0.0019 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-263CBJESD-30 代码：R-PSSO-G6
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：6
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：380 W
最大脉冲漏极电流 (IDM)：1000 A子类别：FET General Purpose Power
表面贴装：YES端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRLS3036-7P 数据手册

 浏览型号AUIRLS3036-7P的Datasheet PDF文件第2页浏览型号AUIRLS3036-7P的Datasheet PDF文件第3页浏览型号AUIRLS3036-7P的Datasheet PDF文件第4页浏览型号AUIRLS3036-7P的Datasheet PDF文件第5页浏览型号AUIRLS3036-7P的Datasheet PDF文件第6页浏览型号AUIRLS3036-7P的Datasheet PDF文件第7页 
PD - 97719A  
AUTOMOTIVE GRADE  
AUIRLS3036-7P  
HEXFET® Power MOSFET  
Features  
●
●
●
●
●
●
●
●
Advanced Process Technology  
Ultra Low On-Resistance  
Dynamic dv/dt Rating  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
D
VDSS  
RDS(on) typ.  
60V  
1.5m  
max.  
ID (Silicon Limited)  
ID (Package Limited)  
1.9m  
300A  
G
240A  
S
Description  
SpecificallydesignedforAutomotiveapplications,thisHEXFET®  
Power MOSFET utilizes the latest processing techniques to  
achieveextremelylowon-resistancepersiliconarea. Additional  
features of this design are a 175°C junction operating  
temperature, fast switching speed and improved repetitive  
avalanche rating . These features combine to make this design  
an extremely efficient and reliable device for use in Automotive  
D
S
S
S
S
S
applications and a wide variety of other applications.  
G
D2Pak 7 Pin  
AUIRLS3036-7P  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured  
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Symbol  
ID @ TC = 25°C  
Parameter  
Max.  
300  
210  
240  
1000  
380  
2.5  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
A
PD @TC = 25°C  
W
Maximum Power Dissipation  
Linear Derating Factor  
W/°C  
V
VGS  
EAS  
IAR  
± 16  
300  
Gate-to-Source Voltage  
mJ  
A
Single Pulse Avalanche Energy (Thermally Limited)  
Avalanche Current  
See Fig. 14, 15, 22a, 22b  
Repetitive Avalanche Energy  
EAR  
mJ  
8.1  
-55 to + 175  
300  
Peak Diode Recovery  
dv/dt  
TJ  
V/ns  
Operating Junction and  
TSTG  
°C  
Storage Temperature Range  
Soldering Temperature, for 10 seconds (1.6mm from case)  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
0.40  
40  
Units  
°C/W  
R  
Junction-to-Case  
JC  
RJA  
–––  
Junction-to-Ambient (PCB Mount, steady state)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
11/29/11  
1234567...12

中文翻译

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AUIRLS3036-7P 替代型号

型号 品牌 替代类型 描述 数据表
IRLS3036-7PPBF INFINEON

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 HEXFET Power MOSFET

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