5秒后页面跳转
捷配首页

Datasheet > AUIRLR3114ZTR
AUIRLR3114ZTR PDF预览

AUIRLR3114ZTR

更新时间： 2024-11-24 12:48:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
14页 225K
描述
Advanced Process Technology

阅读下载

中文翻译

获取价格

AUIRLR3114ZTR 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC, DPAK-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.12
其他特性：AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE雪崩能效等级（Eas）：260 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：40 V最大漏极电流 (Abs) (ID)：42 A
最大漏极电流 (ID)：42 A最大漏源导通电阻：0.0065 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-252AA
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：140 W最大脉冲漏极电流 (IDM)：500 A
子类别：FET General Purpose Power表面贴装：YES
端子面层：MATTE TIN OVER NICKEL端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRLR3114ZTR 数据手册

 浏览型号AUIRLR3114ZTR的Datasheet PDF文件第2页浏览型号AUIRLR3114ZTR的Datasheet PDF文件第3页浏览型号AUIRLR3114ZTR的Datasheet PDF文件第4页浏览型号AUIRLR3114ZTR的Datasheet PDF文件第5页浏览型号AUIRLR3114ZTR的Datasheet PDF文件第6页浏览型号AUIRLR3114ZTR的Datasheet PDF文件第7页 
PD - 96381  
AUTOMOTIVE GRADE  
AUIRLR3114Z  
AUIRLU3114Z  
HEXFET® Power MOSFET  
Features  
Advanced Process Technology  
D
VDSS  
40V  
UltraLowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Logic Level  
RDS(on) max @ 10V  
max @ 4.5V  
4.9m  
6.5m  
130A  
Ω
Ω
G
ID (Silicon Limited)  
S
l
l
Lead-Free,RoHSCompliant  
Automotive Qualified *  
ID (Package Limited)  
42A  
Description  
D
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest processing  
techniques to achieve extremely low on-resistance per  
silicon area. Additional features of this design are a 175°C  
junction operating temperature, fast switching speed and  
improvedrepetitiveavalancherating.Thesefeaturescom-  
bine to make this design an extremely efficient and reliable  
deviceforuseinAutomotiveapplicationsandawidevariety  
of other applications.  
S
S
D
G
G
I-Pak  
AUIRLU3114Z  
D-Pak  
AUIRLR3114Z  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.Thesearestress  
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications  
is not implied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability. Thethermal  
resistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillairconditions.Ambienttemperature(TA)  
is 25°C, unless otherwise specified.  
Parameter  
Max.  
Units  
130  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
89  
A
42  
500  
140  
Pulsed Drain Current  
PD @TC = 25°C  
W
Power Dissipation  
Linear Derating Factor  
0.95  
±16  
W/°C  
V
VGS  
Gate-to-Source Voltage  
EAS (Thermally limited)  
130  
260  
mJ  
Single Pulse Avalanche Energy  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
E
AS (Tested )  
IAR  
See Fig.12a, 12b, 15, 16  
A
EAR  
TJ  
mJ  
Repetitive Avalanche Energy  
Operating Junction and  
-55 to + 175  
TSTG  
°C  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
300(1.6mm from case)  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
1.05  
40  
Units  
RθJC  
Junction-to-Case  
Rθ  
°C/W  
Junction-to-Ambient (PCB mount)  
Junction-to-Ambient  
JA  
RθJA  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
06/22/11  
1234567...14

中文翻译

下载PDF

AUIRLR3114ZTR 替代型号

型号 品牌 替代类型 描述 数据表
AUIRLR3114ZTRR INFINEON

完全替代

 Advanced Process Technology
AUIRLR3114ZTRL INFINEON

完全替代

 Advanced Process Technology
IRLR3114ZTRPBF INFINEON

类似代替

 Power Field-Effect Transistor, 42A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Me

与AUIRLR3114ZTR相关器件

型号 品牌 获取价格 描述 数据表
AUIRLR3114ZTRL INFINEON

获取价格

 		Advanced Process Technology
AUIRLR3114ZTRR INFINEON

获取价格

 		Advanced Process Technology
AUIRLR3410 INFINEON

获取价格

 		HEXFET Power MOSFET
AUIRLR3410TR INFINEON

获取价格

 		Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Me
AUIRLR3410TRL INFINEON

获取价格

 		Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Me
AUIRLR3636 INFINEON

获取价格

 		Power Field-Effect Transistor, 50A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Me
AUIRLR3636TR INFINEON

获取价格

 		Power Field-Effect Transistor, 50A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Me
AUIRLR3636TRL INFINEON

获取价格

 		Power Field-Effect Transistor, 50A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Me
AUIRLR3636TRR INFINEON

获取价格

 		Power Field-Effect Transistor, 50A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Me
AUIRLR3705Z INFINEON

获取价格

 		Logic Level Advanced Process Technology

与AUIRLR3114ZTR相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证