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AUIRLR3705ZTRR

更新时间： 2024-11-24 12:30:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
13页	292K
描述
Logic Level Advanced Process Technology

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中文翻译

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AUIRLR3705ZTRR 数据手册

PD - 97611

AUTOMOTIVE GRADE

AUIRLR3705Z

Features

HEXFET^®Power MOSFET

●

Logic Level

Advanced Process Technology

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

Automotive Qualified *

V_(BR)DSS

55V

8.0m

R_DS(on)max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

Ω

89A

42A

Description

Specifically designed for Automotive applications,

this HEXFET^®Power MOSFET utilizes the latest

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of this

design are a 175°C junction operating temperature,

fast switching speed and improved repetitive ava-

lanche rating . These features combine to make this

design an extremely efficient and reliable device for

use in Automotive applications and a wide variety of

other applications.

D-Pak

AUIRLR3705Z

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Max.

Units

(Silicon Limited)

Continuous Drain Current, V_GS@ 10V

@ T = 25°C

(Silicon Limited)

@ T = 100°C Continuous Drain Current, VGS @ 10V

(Package Limited)

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 25°C

360

Power Dissipation

@T = 25°C

130

W/°C

Linear Derating Factor

0.88

Gate-to-Source Voltage

± 16

E_AS

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

110

190

_AS(tested)

I_AR

E_AR

See Fig.12a, 12b, 15, 16

Repetitive Avalanche Energy

Operating Junction and

-55 to + 175

300

Storage Temperature Range

°C

STG

Soldering Temperature, for 10 seconds (1.6mm from case )

Thermal Resistance

Typ.

Max.

Units

Parameter

R_θJC

R_θJA

Junction-to-Case

–––

1.14

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

°C/W

110

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

12/16/2010

12 3 4 5 6 7...13

中文翻译

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