AUTOMOTIVE GRADE
AUIRLS3034-7P
HEXFET® Power MOSFET
Features
Advanced Process Technology
Ultra Low On-Resistance
Logic Level Gate Drive
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
VDSS
40V
RDS(on) typ.
1.0m
max.
ID (Silicon Limited)
ID (Package Limited)
1.4m
380A
240A
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
D2Pak 7 Pin
AUIRLS3034-7P
G
D
S
Gate
Drain
Source
Standard Pack
Base Part Number
Package Type
Orderable Part Number
Form
Tube
Quantity
50
AUIRLS3034-7P
AUIRLS3034-7P
D2Pak 7 Pin
AUIRLS3034-7TRL
Tape and Reel Left
800
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TC = 25°C
Parameter
Max.
380
Units
A
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
270
240
IDM
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
1540
380
2.5
PD @TC = 25°C
W
W/°C
V
mJ
A
VGS
EAS
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
± 20
250
IAR
Avalanche Current
See Fig.14,15, 22a, 22b
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery
mJ
V/ns
1.3
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
°C
300
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
Junction-to-Case
–––
0.40
RJC
RJA
°C/W
Junction-to-Ambient
–––
40
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-11-4