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AUIRLS3034-7TRL PDF预览

AUIRLS3034-7TRL

更新时间: 2024-01-19 08:56:21
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 690K
描述
Power Field-Effect Transistor, 240A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, ROHS COMPLIANT, PLASTIC, D2PAK-7

AUIRLS3034-7TRL 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:ROHS COMPLIANT, PLASTIC, D2PAK-7Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:1.07Is Samacsys:N
其他特性:AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE雪崩能效等级(Eas):250 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (Abs) (ID):380 A
最大漏极电流 (ID):240 A最大漏源导通电阻:0.0014 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263CB
JESD-30 代码:R-PSSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):380 W最大脉冲漏极电流 (IDM):1540 A
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AUIRLS3034-7TRL 数据手册

 浏览型号AUIRLS3034-7TRL的Datasheet PDF文件第2页浏览型号AUIRLS3034-7TRL的Datasheet PDF文件第3页浏览型号AUIRLS3034-7TRL的Datasheet PDF文件第4页浏览型号AUIRLS3034-7TRL的Datasheet PDF文件第5页浏览型号AUIRLS3034-7TRL的Datasheet PDF文件第6页浏览型号AUIRLS3034-7TRL的Datasheet PDF文件第7页 
AUTOMOTIVE GRADE  
AUIRLS3034-7P  
HEXFET® Power MOSFET  
Features  
Advanced Process Technology  
Ultra Low On-Resistance  
Logic Level Gate Drive  
Dynamic dv/dt Rating  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
VDSS  
40V  
RDS(on) typ.  
1.0m  
max.  
ID (Silicon Limited)  
ID (Package Limited)  
1.4m  
380A  
240A  
Description  
Specifically designed for Automotive applications, this HEXFET®  
Power MOSFET utilizes the latest processing techniques to achieve  
extremely low on-resistance per silicon area. Additional features of  
this design are a 175°C junction operating temperature, fast  
switching speed and improved repetitive avalanche rating . These  
features combine to make this design an extremely efficient and  
reliable device for use in Automotive applications and a wide variety  
of other applications.  
D2Pak 7 Pin  
AUIRLS3034-7P  
G
D
S
Gate  
Drain  
Source  
Standard Pack  
Base Part Number  
Package Type  
Orderable Part Number  
Form  
Tube  
Quantity  
50  
AUIRLS3034-7P  
AUIRLS3034-7P  
D2Pak 7 Pin  
AUIRLS3034-7TRL  
Tape and Reel Left  
800  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress  
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance  
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless  
otherwise specified.  
Symbol  
ID @ TC = 25°C  
Parameter  
Max.  
380  
Units  
A
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
ID @ TC = 100°C  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
270  
240  
IDM  
Pulsed Drain Current   
Maximum Power Dissipation  
Linear Derating Factor  
1540  
380  
2.5  
PD @TC = 25°C  
W
W/°C  
V
mJ  
A
VGS  
EAS  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy (Thermally Limited)   
± 20  
250  
IAR  
Avalanche Current   
See Fig.14,15, 22a, 22b  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery   
mJ  
V/ns  
1.3  
Operating Junction and  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds (1.6mm from case)  
°C  
300  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
Max.  
Units  
Junction-to-Case   
–––  
0.40  
RJC  
RJA  
°C/W  
Junction-to-Ambient   
–––  
40  
HEXFET® is a registered trademark of Infineon.  
*Qualification standards can be found at www.infineon.com  
1
2015-11-4  

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