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AUIRLR3636TR

更新时间： 2024-11-28 03:44:27
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
12页 263K
描述
Power Field-Effect Transistor, 50A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3

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AUIRLR3636TR 数据手册

 浏览型号AUIRLR3636TR的Datasheet PDF文件第2页浏览型号AUIRLR3636TR的Datasheet PDF文件第3页浏览型号AUIRLR3636TR的Datasheet PDF文件第4页浏览型号AUIRLR3636TR的Datasheet PDF文件第5页浏览型号AUIRLR3636TR的Datasheet PDF文件第6页浏览型号AUIRLR3636TR的Datasheet PDF文件第7页 
AUTOMOTIVEGRADE  
AUIRLR3636  
Features  
HEXFET® Power MOSFET  
l
l
l
l
l
l
l
l
l
Advanced Process Technology  
D
S
VDSS  
RDS(on) typ.  
max.  
ID (Silicon Limited)  
ID (Package Limited)  
60V  
5.4m  
6.8m  
99A  
Ultra Low On-Resistance  
Logic Level Gate Drive  
Advanced Process Technology  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
G
50A  
D
Description  
Specifically designed for Automotive applications, this HEXFET®  
PowerMOSFETutilizesthelatestprocessingtechniquestoachieve  
extremely low on-resistance per silicon area. Additional features of  
thisdesign area175°Cjunctionoperatingtemperature,fastswitching  
speed and improved repetitive avalanche rating . These features  
combinetomakethisdesignanextremelyefficientandreliabledevice  
foruseinAutomotiveapplicationsandawidevarietyofotherapplications.  
S
G
D-Pak  
AUIRLR3636  
G
D
S
Gate  
Drain  
Source  
Standard Pack  
Form  
Base Part Number  
Package Type  
Orderable Part Number  
Quantity  
75  
2000  
3000  
3000  
Tube  
AUIRLR3636  
AUIRLR3636TR  
AUIRLR3636TRL  
AUIRLR3636TRR  
Tape and Reel  
Tape and Reel Left  
Tape and Reel Right  
AUIRLR3636  
D-pak  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Symbol  
ID @ TC = 25°C  
Parameter  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
Max.  
99  
Units  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
70  
A
50  
396  
143  
0.95  
±16  
170  
PD @TC = 25°C  
W
Maximum Power Dissipation  
Linear Derating Factor  
W/°C  
V
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
mJ  
A
Single Pulse Avalanche Energy (Thermally Limited)  
Avalanche Current  
See Fig.14, 15, 22a, 22b  
Repetitive Avalanche Energy  
EAR  
mJ  
22  
-55 to + 175  
300  
Peak Diode Recovery  
dv/dt  
TJ  
V/ns  
Operating Junction and  
TSTG  
°C  
Storage Temperature Range  
Soldering Temperature, for 10 seconds (1.6mm from case)  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
1.05  
50  
Units  
RθJC  
Junction-to-Case  
RθJA  
RθJA  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
°C/W  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
1
www.irf.com © 2014 International Rectifier  
Submit Datasheet Feedback  
April 09, 2014  
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