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AUIRLR3705ZTR PDF预览

AUIRLR3705ZTR

更新时间： 2024-11-27 12:30:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
13页 292K
描述
Logic Level Advanced Process Technology

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中文翻译

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AUIRLR3705ZTR 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：ROHS COMPLIANT, PLASTIC, DPAK-3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：26 weeks
风险等级：5.12Is Samacsys：N
其他特性：AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE雪崩能效等级（Eas）：190 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：55 V最大漏极电流 (Abs) (ID)：89 A
最大漏极电流 (ID)：42 A最大漏源导通电阻：0.008 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-252AA
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：130 W最大脉冲漏极电流 (IDM)：360 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRLR3705ZTR 数据手册

 浏览型号AUIRLR3705ZTR的Datasheet PDF文件第2页浏览型号AUIRLR3705ZTR的Datasheet PDF文件第3页浏览型号AUIRLR3705ZTR的Datasheet PDF文件第4页浏览型号AUIRLR3705ZTR的Datasheet PDF文件第5页浏览型号AUIRLR3705ZTR的Datasheet PDF文件第6页浏览型号AUIRLR3705ZTR的Datasheet PDF文件第7页 
PD - 97611  
AUTOMOTIVE GRADE  
AUIRLR3705Z  
Features  
HEXFET® Power MOSFET  
●
●
●
●
●
●
●
●
Logic Level  
Advanced Process Technology  
UltraLowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
Automotive Qualified *  
D
V(BR)DSS  
55V  
8.0m  
RDS(on) max.  
ID (Silicon Limited)  
ID (Package Limited)  
Ω
G
89A  
42A  
S
Description  
D
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest  
processing techniques to achieve extremely low on-  
resistance per silicon area. Additional features of this  
design are a 175°C junction operating temperature,  
fast switching speed and improved repetitive ava-  
lanche rating . These features combine to make this  
design an extremely efficient and reliable device for  
use in Automotive applications and a wide variety of  
other applications.  
S
G
D-Pak  
AUIRLR3705Z  
G
Gate  
D
Drain  
S
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
Units  
(Silicon Limited)  
Continuous Drain Current, VGS @ 10V  
@ T = 25°C  
C
I
I
I
I
89  
D
D
D
(Silicon Limited)  
@ T = 100°C Continuous Drain Current, VGS @ 10V  
63  
A
C
(Package Limited)  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
@ T = 25°C  
42  
C
360  
DM  
Power Dissipation  
@T = 25°C  
C
P
130  
W
W/°C  
V
D
Linear Derating Factor  
0.88  
Gate-to-Source Voltage  
V
± 16  
GS  
EAS  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
110  
190  
mJ  
E
AS (tested)  
IAR  
EAR  
See Fig.12a, 12b, 15, 16  
A
Repetitive Avalanche Energy  
mJ  
Operating Junction and  
T
J
-55 to + 175  
300  
T
Storage Temperature Range  
°C  
STG  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Thermal Resistance  
Typ.  
Max.  
Units  
Parameter  
RθJC  
RθJA  
RθJA  
Junction-to-Case  
–––  
–––  
–––  
1.14  
40  
Junction-to-Ambient (PCB mount)  
Junction-to-Ambient  
°C/W  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
12/16/2010  
1234567...13

中文翻译

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AUIRLR3705ZTR 替代型号

型号 品牌 替代类型 描述 数据表
AUIRLR3705ZTRL INFINEON

完全替代

 Logic Level Advanced Process Technology
AUIRLR3705Z INFINEON

完全替代

 Logic Level Advanced Process Technology
IRLR3705ZPBF INFINEON

完全替代

 AUTOMOTIVE MOSFET HEXFET Power MOSFET

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