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AUIRLR2905ZTR

更新时间： 2024-11-24 12:29:43

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
13页	278K
描述
Specifically designed for Automotive applications

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中文翻译

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AUIRLR2905ZTR 数据手册

PD - 97583

AUTOMOTIVE GRADE

AUIRLR2905Z

Features

HEXFET^®Power MOSFET

●

Logic Level

Advanced Process Technology

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

V_(BR)DSS

55V

13.5mΩ

60A

R_DS(on)max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

42A

Automotive Qualified *

Description

Specifically designed for Automotive applications,

this HEXFET^®Power MOSFET utilizes the latest

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of this

design are a 175°C junction operating temperature,

fast switching speed and improved repetitive ava-

lanche rating . These features combine to make this

design an extremely efficient and reliable device for

use in Automotive applications and a wide variety of

other applications.

D-Pak

AUIRLR2905Z

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

Max.

Units

@ T = 25°C

@ T = 100°C

@ T = 25°C

240

110

@T = 25°C

Power Dissipation

Linear Derating Factor

0.72

± 16

W/°C

Gate-to-Source Voltage

E_AS

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(tested )

I_AR

See Fig.12a, 12b, 15, 16

E_AR

Repetitive Avalanche Energy

-55 to + 175

Operating Junction and

°C

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds (1.6mm from case )

Mounting Torque, 6-32 or M3 screw

300

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.38

Units

R_θ

Junction-to-Case

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

R_θ

°C/W

110

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

10/28/2010

12 3 4 5 6 7...13

中文翻译

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与AUIRLR2905ZTR相关器件

型号	品牌	获取价格	描述	数据表
AUIRLR2905ZTRL	INFINEON	获取价格	Specifically designed for Automotive applications
AUIRLR2905ZTRR	INFINEON	获取价格	Specifically designed for Automotive applications
AUIRLR2908	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRLR2908TR	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRLR2908TRL	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRLR2908TRR	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRLR3105	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRLR3105TR	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRLR3105TRL	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRLR3105TRR	INFINEON	获取价格	AUTOMOTIVE GRADE

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