Datasheet > AUIRLR3110ZTR

AUIRLR3110ZTR

更新时间： 2024-11-27 12:32:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	269K
描述
AUTOMOTIVE GRADE

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AUIRLR3110ZTR 数据手册

PD - 96369

AUTOMOTIVE GRADE

AUIRLR3110Z

AUIRLU3110Z

HEXFET^®Power MOSFET

100V

Features

Advanced Process Technology

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

V_DSS

R_DS(on)typ.

max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

11mΩ

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

14m

63A

Automotive Qualified *

42A

Description

Specifically designed for Automotive applications, this

HEXFET^®Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per

siliconarea. Additionalfeaturesofthisdesign area175°C

junction operating temperature, fast switching speed and

improved repetitive avalanche rating . These features

combine to make this design an extremely efficient and

reliable device for use in Automotive applications and a

wide variety of other applications.

I-Pak

AUIRLU3110Z

D-Pak

AUIRLR3110Z

Gate

Drain

Source

Absolute Maximum Ratings

StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated

in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect

devicereliability.Thethermalresistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillair

conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

Units

(Silicon Limited)

(Package Limited)

@ T = 25°C

@ T = 100°C

@ T = 25°C

250

140

Power Dissipation

W/°C

@T = 25°C

0.95

Linear Derating Factor

±16

Gate-to-Source Voltage

E_{AS (Thermally limited)}

110

140

Single Pulse Avalanche Energy

E_AS(Tested )

Single Pulse Avalanche Energy Tested Value

Avalanche Current

I_AR

See Fig.12a, 12b, 15, 16

E_AR

Repetitive Avalanche Energy

-55 to + 175

Operating Junction and

Storage Temperature Range

°C

STG

300

Reflow Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.05

Units

R_θJC

R_θJA

Junction-to-Case

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

°C/W

110

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

05/03/11

12 3 4 5 6 7...14

中文翻译

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与AUIRLR3110ZTR相关器件

型号	品牌	获取价格	描述	数据表
AUIRLR3110ZTRL	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRLR3110ZTRR	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRLR3114Z	INFINEON	获取价格	Advanced Process Technology
AUIRLR3114ZTR	INFINEON	获取价格	Advanced Process Technology
AUIRLR3114ZTRL	INFINEON	获取价格	Advanced Process Technology
AUIRLR3114ZTRR	INFINEON	获取价格	Advanced Process Technology
AUIRLR3410	INFINEON	获取价格	HEXFET Power MOSFET
AUIRLR3410TR	INFINEON	获取价格	Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Me
AUIRLR3410TRL	INFINEON	获取价格	Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Me
AUIRLR3636	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Me

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