Datasheet > AUIRLR2908TRR

AUIRLR2908TRR

更新时间： 2024-02-11 08:21:29

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	230K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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数据手册
替代型号

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AUIRLR2908TRR 数据手册

PD - 97734

AUTOMOTIVEGRADE

AUIRLR2908

Features

HEXFET^®Power MOSFET

l AdvancedPlanarTechnology

l Logic-LevelGateDrive

l LowOn-Resistance

l 175°COperatingTemperature

l Fast Switching

V_(BR)DSS

80V

R_DS(on)typ.

max

I_{D (Silicon Limited)}

22.5m



28m

39A



l FullyAvalancheRated

l RepetitiveAvalancheAllowed

up to Tjmax

I_{D (Package Limited)}

30A

l Lead-Free,RoHSCompliant

l AutomotiveQualified*

Description

Specifically designed for Automotive applications,

this Stripe Planar design of HEXFET® Power

MOSFETs utilizes the latest processing techniques

to achieve low on-resistance per silicon area. This

benefit combined with the fast switching speed and

ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in Automotive and a wide variety of other applications.

D-Pak

AUIRLR2908

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Max.

Parameter

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

@ T = 25°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

@ T = 100°C

@ T = 25°C

150

120

0.77

± 16

@T = 25°C Power Dissipation

W/°C

Linear Derating Factor

Gate-to-Source Voltage

E_AS

_AS(tested )

180

250

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

I_AR

See Fig. 12a, 12b, 15, 16

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

2.3

V/ns

-55 to + 175

Storage Temperature Range

°C

STG

300

Soldering Temperature, for 10 seconds (1.6mm from case )

Thermal Resistance

Parameter

Typ.

–––

Max.

1.3

Units

R_JC

R_JA

Junction-to-Case

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

°C/W

110

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

10/17/11

12 3 4 5 6 7...13

中文翻译

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AUIRLR2908TRR 替代型号

型号	品牌	替代类型	描述	数据表
IRLR2908	INFINEON	完全替代	AUTOMOTIVE MOSFET
AUIRLR2908	INFINEON	功能相似	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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