Datasheet > AUIRLR3114Z

AUIRLR3114Z

更新时间： 2024-11-27 12:48:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	225K
描述
Advanced Process Technology

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AUIRLR3114Z 数据手册

PD - 96381

AUTOMOTIVE GRADE

AUIRLR3114Z

AUIRLU3114Z

HEXFET^®Power MOSFET

Features

Advanced Process Technology

V_DSS

40V

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Logic Level

R_DS(on)max @ 10V

max @ 4.5V

4.9m

6.5m

130A

I_{D (Silicon Limited)}

Lead-Free,RoHSCompliant

Automotive Qualified *

I_{D (Package Limited)}

42A

Description

Specifically designed for Automotive applications, this

HEXFET^®Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per

silicon area. Additional features of this design are a 175°C

junction operating temperature, fast switching speed and

improvedrepetitiveavalancherating.Thesefeaturescom-

bine to make this design an extremely efficient and reliable

deviceforuseinAutomotiveapplicationsandawidevariety

of other applications.

I-Pak

AUIRLU3114Z

D-Pak

AUIRLR3114Z

Gate

Drain

Source

Absolute Maximum Ratings

StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.Thesearestress

ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications

is not implied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability. Thethermal

resistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillairconditions.Ambienttemperature(T_A)

is 25°C, unless otherwise specified.

Parameter

Max.

Units

130

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

500

140

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

Linear Derating Factor

0.95

±16

W/°C

V_GS

Gate-to-Source Voltage

E_{AS (Thermally limited)}

130

260

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

Avalanche Current

_AS(Tested )

I_AR

See Fig.12a, 12b, 15, 16

E_AR

T_J

Repetitive Avalanche Energy

Operating Junction and

-55 to + 175

T_STG

°C

Storage Temperature Range

Soldering Temperature, for 10 seconds

300(1.6mm from case)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.05

Units

R_θJC

Junction-to-Case

R_θ

°C/W

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

R_θJA

110

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

06/22/11

12 3 4 5 6 7...14

中文翻译

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AUIRLR3114Z 替代型号

型号	品牌	替代类型	描述	数据表
AUIRLR3114ZTRR	INFINEON	完全替代	Advanced Process Technology
IRLR3114ZTRPBF	INFINEON	类似代替	Power Field-Effect Transistor, 42A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Me
IRLR3114ZPBF	INFINEON	类似代替	AUTOMOTIVE MOSFET

与AUIRLR3114Z相关器件

型号	品牌	获取价格	描述	数据表
AUIRLR3114ZTR	INFINEON	获取价格	Advanced Process Technology
AUIRLR3114ZTRL	INFINEON	获取价格	Advanced Process Technology
AUIRLR3114ZTRR	INFINEON	获取价格	Advanced Process Technology
AUIRLR3410	INFINEON	获取价格	HEXFET Power MOSFET
AUIRLR3410TR	INFINEON	获取价格	Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Me
AUIRLR3410TRL	INFINEON	获取价格	Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Me
AUIRLR3636	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Me
AUIRLR3636TR	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Me
AUIRLR3636TRL	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Me
AUIRLR3636TRR	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Me

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