Datasheet > 晶体管 > 功率场效应晶体管> AUIRLR3105TRL

AUIRLR3105TRL

更新时间： 2024-10-01 12:35:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
13页	632K
描述
AUTOMOTIVE GRADE

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中文翻译

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数据手册
替代型号

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AUIRLR3105TRL 数据手册

PD - 97703A

AUTOMOTIVEGRADE

AUIRLR3105

Features

HEXFET^®Power MOSFET

l AdvancedPlanarTechnology

l Logic-LevelGateDrive

Dynamic dV/dT Rating

l LowOn-Resistance

l 175°COperatingTemperature

l Fast Switching

l FullyAvalancheRated

l RepetitiveAvalancheAllowed

up to Tjmax

V_(BR)DSS

55V

R_DS(on)typ.

30m

37m

max

I_D

25A

l Lead-Free,RoHSCompliant

l AutomotiveQualified*

Description

Specifically designed for Automotive applications,

this Stripe Planar design of HEXFET® Power

MOSFETs utilizes the latest processing techniques

to achieve low on-resistance per silicon area. This

benefit combined with the fast switching speed and

ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in Automotive and a wide variety of other applications.

D-Pak

AUIRLR3105

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Max.

Parameter

Units

Continuous Drain Current, V_GS@ 10V

@ T = 25°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 100°C

100

@T = 25°C Power Dissipation

W/°C

0.38

± 16

Linear Derating Factor

Gate-to-Source Voltage

E_AS

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(tested )

I_AR

See Fig. 12a, 12b, 15, 16

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

3.4

dv/dt

V/ns

-55 to + 175

Storage Temperature Range

°C

STG

300

Soldering Temperature, for 10 seconds (1.6mm from case )

Thermal Resistance

Parameter

Typ.

–––

Max.

2.65

Units

R_θJC

R_θJA

Junction-to-Case

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

°C/W

110

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

11/1/11

12 3 4 5 6 7...13

中文翻译

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AUIRLR3105TRL 替代型号

型号	品牌	替代类型	描述	数据表
AUIRLR3105TRR	INFINEON	完全替代	AUTOMOTIVE GRADE
IRLR3105	INFINEON	完全替代	AUTOMOTIVE MOSFET
IRLR3105TRPBF	INFINEON	功能相似	Logic-Level Gate Drive

与AUIRLR3105TRL相关器件

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AUIRLR3110ZTR	INFINEON	获取价格	AUTOMOTIVE GRADE
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AUIRLR3110ZTRR	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRLR3114Z	INFINEON	获取价格	Advanced Process Technology
AUIRLR3114ZTR	INFINEON	获取价格	Advanced Process Technology
AUIRLR3114ZTRL	INFINEON	获取价格	Advanced Process Technology
AUIRLR3114ZTRR	INFINEON	获取价格	Advanced Process Technology
AUIRLR3410	INFINEON	获取价格	HEXFET Power MOSFET

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