5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率场效应晶体管> AUIRLR3105TRR
AUIRLR3105TRR PDF预览

AUIRLR3105TRR

更新时间： 2024-10-01 12:35:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
13页 632K
描述
AUTOMOTIVE GRADE

阅读下载

中文翻译

获取价格

AUIRLR3105TRR 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：,Reach Compliance Code：compliant
风险等级：5.83Is Samacsys：N
配置：Single最大漏极电流 (Abs) (ID)：25 A
FET 技术：METAL-OXIDE SEMICONDUCTOR工作模式：ENHANCEMENT MODE
最高工作温度：175 °C极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：57 W子类别：FET General Purpose Power
表面贴装：YESBase Number Matches：1

AUIRLR3105TRR 数据手册

 浏览型号AUIRLR3105TRR的Datasheet PDF文件第2页浏览型号AUIRLR3105TRR的Datasheet PDF文件第3页浏览型号AUIRLR3105TRR的Datasheet PDF文件第4页浏览型号AUIRLR3105TRR的Datasheet PDF文件第5页浏览型号AUIRLR3105TRR的Datasheet PDF文件第6页浏览型号AUIRLR3105TRR的Datasheet PDF文件第7页 
PD - 97703A  
AUTOMOTIVEGRADE  
AUIRLR3105  
Features  
HEXFET® Power MOSFET  
l AdvancedPlanarTechnology  
l Logic-LevelGateDrive  
Dynamic dV/dT Rating  
l LowOn-Resistance  
l 175°COperatingTemperature  
l Fast Switching  
l FullyAvalancheRated  
l RepetitiveAvalancheAllowed  
up to Tjmax  
D
V(BR)DSS  
55V  
RDS(on) typ.  
30m  
37m  
Ω
Ω
G
max  
S
ID  
25A  
l Lead-Free,RoHSCompliant  
l AutomotiveQualified*  
D
Description  
S
Specifically designed for Automotive applications,  
this Stripe Planar design of HEXFET® Power  
MOSFETs utilizes the latest processing techniques  
to achieve low on-resistance per silicon area. This  
benefit combined with the fast switching speed and  
ruggedized device design that HEXFET power  
MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use  
in Automotive and a wide variety of other applications.  
G
D-Pak  
AUIRLR3105  
G
Gate  
D
S
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
25  
Parameter  
Units  
Continuous Drain Current, VGS @ 10V  
@ T = 25°C  
C
I
I
I
D
D
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
18  
@ T = 100°C  
A
C
100  
DM  
57  
P
@T = 25°C Power Dissipation  
W
W/°C  
V
D
C
0.38  
± 16  
Linear Derating Factor  
Gate-to-Source Voltage  
V
GS  
EAS  
61  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
EAS (tested )  
IAR  
94  
See Fig. 12a, 12b, 15, 16  
A
EAR  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Operating Junction and  
mJ  
3.4  
dv/dt  
V/ns  
-55 to + 175  
T
J
T
Storage Temperature Range  
°C  
STG  
300  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
2.65  
50  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Case  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
°C/W  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
11/1/11  
1234567...13

中文翻译

下载PDF

AUIRLR3105TRR 替代型号

型号 品牌 替代类型 描述 数据表
AUIRLR3105TRL INFINEON

完全替代

 AUTOMOTIVE GRADE
IRLR3105TRPBF INFINEON

类似代替

 Logic-Level Gate Drive
IRLR3105PBF INFINEON

类似代替

 AUTOMOTIVE MOSFET

与AUIRLR3105TRR相关器件

型号 品牌 获取价格 描述 数据表
AUIRLR3110Z INFINEON

获取价格

 		AUTOMOTIVE GRADE
AUIRLR3110ZTR INFINEON

获取价格

 		AUTOMOTIVE GRADE
AUIRLR3110ZTRL INFINEON

获取价格

 		AUTOMOTIVE GRADE
AUIRLR3110ZTRR INFINEON

获取价格

 		AUTOMOTIVE GRADE
AUIRLR3114Z INFINEON

获取价格

 		Advanced Process Technology
AUIRLR3114ZTR INFINEON

获取价格

 		Advanced Process Technology
AUIRLR3114ZTRL INFINEON

获取价格

 		Advanced Process Technology
AUIRLR3114ZTRR INFINEON

获取价格

 		Advanced Process Technology
AUIRLR3410 INFINEON

获取价格

 		HEXFET Power MOSFET
AUIRLR3410TR INFINEON

获取价格

 		Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Me

与AUIRLR3105TRR相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证