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AUIRLR3110ZTRR

更新时间： 2024-11-27 12:32:23
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
14页 269K
描述
AUTOMOTIVE GRADE

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AUIRLR3110ZTRR 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：,Reach Compliance Code：compliant
风险等级：5.84配置：Single
最大漏极电流 (Abs) (ID)：42 AFET 技术：METAL-OXIDE SEMICONDUCTOR
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：140 W
子类别：FET General Purpose Power表面贴装：YES
Base Number Matches：1

AUIRLR3110ZTRR 数据手册

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PD - 96369  
AUTOMOTIVE GRADE  
AUIRLR3110Z  
AUIRLU3110Z  
HEXFET® Power MOSFET  
100V  
Features  
l
Advanced Process Technology  
UltraLowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
D
S
l
l
l
l
l
l
VDSS  
RDS(on) typ.  
max.  
ID (Silicon Limited)  
ID (Package Limited)  
11mΩ  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
14m  
63A  
Ω
G
Automotive Qualified *  
42A  
Description  
D
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest processing  
techniques to achieve extremely low on-resistance per  
siliconarea. Additionalfeaturesofthisdesign area175°C  
junction operating temperature, fast switching speed and  
improved repetitive avalanche rating . These features  
combine to make this design an extremely efficient and  
reliable device for use in Automotive applications and a  
wide variety of other applications.  
S
D
S
G
G
I-Pak  
AUIRLU3110Z  
D-Pak  
AUIRLR3110Z  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated  
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect  
devicereliability.Thethermalresistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillair  
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
63  
Units  
(Silicon Limited)  
(Silicon Limited)  
(Package Limited)  
I
I
I
I
@ T = 25°C  
C
D
D
D
45  
@ T = 100°C  
C
A
42  
@ T = 25°C  
C
250  
DM  
140  
Power Dissipation  
W
W/°C  
V
P
@T = 25°C  
C
D
0.95  
Linear Derating Factor  
±16  
Gate-to-Source Voltage  
V
GS  
EAS (Thermally limited)  
110  
140  
Single Pulse Avalanche Energy  
mJ  
EAS (Tested )  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
IAR  
See Fig.12a, 12b, 15, 16  
A
EAR  
Repetitive Avalanche Energy  
mJ  
-55 to + 175  
Operating Junction and  
T
T
J
Storage Temperature Range  
°C  
STG  
300  
Reflow Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
1.05  
40  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Case  
Junction-to-Ambient (PCB mount)  
Junction-to-Ambient  
°C/W  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
05/03/11  
1234567...14

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