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AUIRLR2908TR

更新时间： 2024-02-17 04:39:25
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 230K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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AUIRLR2908TR 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：,Reach Compliance Code：unknown
风险等级：5.16配置：Single
最大漏极电流 (Abs) (ID)：30 AFET 技术：METAL-OXIDE SEMICONDUCTOR
最高工作温度：175 °C极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：120 W子类别：FET General Purpose Power
表面贴装：YESBase Number Matches：1

AUIRLR2908TR 数据手册

 浏览型号AUIRLR2908TR的Datasheet PDF文件第2页浏览型号AUIRLR2908TR的Datasheet PDF文件第3页浏览型号AUIRLR2908TR的Datasheet PDF文件第4页浏览型号AUIRLR2908TR的Datasheet PDF文件第5页浏览型号AUIRLR2908TR的Datasheet PDF文件第6页浏览型号AUIRLR2908TR的Datasheet PDF文件第7页 
PD - 97734  
AUTOMOTIVEGRADE  
AUIRLR2908  
Features  
HEXFET® Power MOSFET  
l AdvancedPlanarTechnology  
l Logic-LevelGateDrive  
l LowOn-Resistance  
l 175°COperatingTemperature  
l Fast Switching  
D
V(BR)DSS  
80V  
RDS(on) typ.  
max  
ID (Silicon Limited)  
22.5m  
28m  
39A  
G
l FullyAvalancheRated  
l RepetitiveAvalancheAllowed  
up to Tjmax  
S
ID (Package Limited)  
30A  
l Lead-Free,RoHSCompliant  
l AutomotiveQualified*  
D
Description  
Specifically designed for Automotive applications,  
this Stripe Planar design of HEXFET® Power  
MOSFETs utilizes the latest processing techniques  
to achieve low on-resistance per silicon area. This  
benefit combined with the fast switching speed and  
ruggedized device design that HEXFET power  
MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use  
in Automotive and a wide variety of other applications.  
S
G
D-Pak  
AUIRLR2908  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
39  
Parameter  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
@ T = 25°C  
C
I
I
I
I
D
D
D
28  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
A
@ T = 100°C  
C
30  
@ T = 25°C  
C
150  
DM  
120  
0.77  
± 16  
P
@T = 25°C Power Dissipation  
W
W/°C  
V
D
C
Linear Derating Factor  
Gate-to-Source Voltage  
V
GS  
EAS  
AS (tested )  
180  
250  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
E
IAR  
See Fig. 12a, 12b, 15, 16  
A
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Operating Junction and  
mJ  
2.3  
V/ns  
-55 to + 175  
T
T
J
Storage Temperature Range  
°C  
STG  
300  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
1.3  
Units  
RJC  
RJA  
RJA  
Junction-to-Case  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
40  
°C/W  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
10/17/11  
1234567...13

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