Datasheet > AUIRLR2905

AUIRLR2905

更新时间： 2024-01-26 21:35:19

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
11页	468K
描述
Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2

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技术参数
数据手册
替代型号

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AUIRLR2905 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	TO-252AA
包装说明：	SMALL OUTLINE, R-PSSO-G2	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.12	Is Samacsys：	N
其他特性：	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE	雪崩能效等级（Eas）：	85 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	55 V	最大漏极电流 (Abs) (ID)：	60 A
最大漏极电流 (ID)：	42 A	最大漏源导通电阻：	0.0135 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-252AA
JESD-30 代码：	R-PSSO-G2	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	2	工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	110 W	最大脉冲漏极电流 (IDM)：	240 A
认证状态：	Not Qualified	子类别：	FET General Purpose Power
表面贴装：	YES	端子面层：	MATTE TIN OVER NICKEL
端子形式：	GULL WING	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	30	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

AUIRLR2905 数据手册

AUIRLR2905

AUIRLU2905

AUTOMOTIVE GRADE

Features

HEXFET^®Power MOSFET

 Advanced Planar Technology

 Logic Level Gate Drive

 Low On-Resistance

 Dynamic dV/dT Rating

 175°C Operating Temperature

 Fast Switching

V_DSS

R_DS(on)

I_D

55V

max.

27m

 Fully Avalanche Rated

42A

 Repetitive Avalanche Allowed up to Tjmax

 Lead-Free, RoHS Compliant

 Automotive Qualified *

Description

Specifically designed for Automotive applications, this cellular

design of HEXFET® Power MOSFETs utilizes the latest

processing techniques to achieve low on-resistance per silicon

area. This benefit combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs are well

known for, provides the designer with an extremely efficient and

reliable device for use in Automotive and a wide variety of other

applications.

D-Pak

AUIRLR2905

I-Pak

AUIRLU2905

Gate

Drain

Source

Standard Pack

Form

Tube

Base part number

AUIRLU2905

Package Type

I-Pak

Orderable Part Number

Quantity

3000

AUIRLU2905

AUIRLR2905

AUIRLR2905TRL

Tube

Tape and Reel Left

AUIRLR2905

D-Pak

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress

ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance

and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless

Symbol

Parameter

Max.

Units

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current 

160

110

0.71

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

E_AS

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited) 

± 16

210

E_{AS (tested)}

I_AR

Single Pulse Avalanche Energy (tested Value) 

Avalanche Current 

200

E_AR

Repetitive Avalanche Energy 

Peak Diode Recovery

dv/dt

T_J

5.0

V/ns

Operating Junction and

-55 to + 175

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds (1.6mm from case)

300

Thermal Resistance

Symbol

Parameter

Junction-to-Case 

Typ.

–––

Max.

1.4

Units

R_JC

R_JA

Junction-to-Ambient ( PCB Mount) 

Junction-to-Ambient

°C/W

110

HEXFET® is a registered trademark of Infineon.

*Qualification standards can be found at www.infineon.com

2015-12-11

12 3 4 5 6 7...11

中文翻译

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AUIRLR2905 替代型号

型号	品牌	替代类型	描述	数据表
AUIRLR2905TRL	INFINEON	完全替代	Advanced Planar Technology
IRLR2905TRPBF	INFINEON	类似代替	Advanced Process Technology
IRLR2905PBF	INFINEON	类似代替	HEXFET Power MOSFET

与AUIRLR2905相关器件

型号	品牌	获取价格	描述	数据表
AUIRLR2905TR	INFINEON	获取价格	Advanced Planar Technology
AUIRLR2905TRL	INFINEON	获取价格	Advanced Planar Technology
AUIRLR2905TRR	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
AUIRLR2905Z	INFINEON	获取价格	Specifically designed for Automotive applications
AUIRLR2905ZTR	INFINEON	获取价格	Specifically designed for Automotive applications
AUIRLR2905ZTRL	INFINEON	获取价格	Specifically designed for Automotive applications
AUIRLR2905ZTRR	INFINEON	获取价格	Specifically designed for Automotive applications
AUIRLR2908	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRLR2908TR	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRLR2908TRL	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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