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AUIRLR2905TRR

更新时间： 2024-02-06 06:11:06
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
11页 238K
描述
Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2

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AUIRLR2905TRR 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：TO-252AA
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.13其他特性：AVALANCHE RATED
雪崩能效等级（Eas）：210 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：55 V
最大漏极电流 (Abs) (ID)：42 A最大漏极电流 (ID)：42 A
最大漏源导通电阻：0.03 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-252AAJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：110 W
最大脉冲漏极电流 (IDM)：160 A认证状态：Not Qualified
参考标准：AEC-Q101子类别：FET General Purpose Power
表面贴装：YES端子面层：MATTE TIN OVER NICKEL
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRLR2905TRR 数据手册

 浏览型号AUIRLR2905TRR的Datasheet PDF文件第2页浏览型号AUIRLR2905TRR的Datasheet PDF文件第3页浏览型号AUIRLR2905TRR的Datasheet PDF文件第4页浏览型号AUIRLR2905TRR的Datasheet PDF文件第5页浏览型号AUIRLR2905TRR的Datasheet PDF文件第6页浏览型号AUIRLR2905TRR的Datasheet PDF文件第7页 
AUIRLR2905  
AUIRLU2905  
HEXFET® Power MOSFET  
AUTOMOTIVE GRADE  
• Advanced Planar Technology  
• Logic-Level Gate Drive  
• Low On-Resistance  
• Dynamic dV/dT Rating  
• 175°C Operating Temperature  
• Fast Switching  
D
S
V(BR)DSS  
RDS(on) max.  
ID  
55V  
27m  
G
42A  
• Fully Avalanche Rated  
• Repetitive Avalanche Allowed up to Tjmax  
• Lead-Free, RoHS Compliant  
• Automotive Qualified  
D
S
S
Description  
D
G
G
Specifically designed for Automotive applications,  
this cellular design of HEXFET® Power MOSFETs  
utilizes the latest processing techniques to achieve  
low on-resistance per silicon area. This benefit  
combined with the fast switching speed and  
ruggedized device design that HEXFET power  
MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use  
in Automotive and a wide variety of other applications.  
D-Pak  
I-Pak  
AUIRLU2905  
AUIRLRU2905  
G
Gate  
D
S
Drain  
Source  
Base part number Package Type  
Standard Pack  
Complete Part Number  
Form  
Tube  
Tape and Reel  
Quantity  
75  
2000  
3000  
3000  
75  
AUIRLR2905  
Dpak  
AUIRLR2905  
AUIRLR2905TR  
AUIRLR2905TRL  
AUIRLR2905TRR  
AUIRLU2905  
Tape and Reel Left  
Tape and Reel Right  
Tube  
AUIRLU2905  
Ipak  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the  
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
42  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Units  
I
I
I
@ T = 25°C  
C
D
30  
A
@ T = 100°C  
D
C
160  
DM  
Power Dissipation  
110  
0.71  
± 16  
W
W/°C  
V
P
@T = 25°C  
C
D
Linear Derating Factor  
Gate-to-Source Voltage  
V
GS  
210  
EAS  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
200  
EAS (tested )  
25  
11  
IAR  
A
EAR  
Repetitive Avalanche Energy  
mJ  
Operating Junction and  
-55 to + 175  
T
T
J
Storage Temperature Range  
°C  
STG  
300  
Soldering Temperature, for 10 seconds (1.6mm from case )  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com © 2012 International Rectifier  
June 5, 2012 PD-97623A  
1
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