Datasheet > AUIRLR2905TR

AUIRLR2905TR

更新时间： 2024-01-02 12:42:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	243K
描述
Advanced Planar Technology

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中文翻译

获取价格

数据手册

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AUIRLR2905TR 数据手册

AUIRLR2905

AUIRLU2905

HEXFET^®Power MOSFET

AUTOMOTIVE GRADE

• Advanced Planar Technology

• Logic-Level Gate Drive

• Low On-Resistance

• Dynamic dV/dT Rating

• 175°C Operating Temperature

• Fast Switching

V_(BR)DSS

R_DS(on)max.

I_D

55V

27m



42A

• Fully Avalanche Rated

• Repetitive Avalanche Allowed up to Tjmax

• Lead-Free, RoHS Compliant

• Automotive Qualified

Description

Specifically designed for Automotive applications,

this cellular design of HEXFET® Power MOSFETs

utilizes the latest processing techniques to achieve

low on-resistance per silicon area. This benefit

combined with the fast switching speed and

ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in Automotive and a wide variety of other applications.

D-Pak

I-Pak

AUIRLU2905

AUIRLRU2905

Gate

Drain

Source

Base part number Package Type

Standard Pack

Complete Part Number

Form

Tube

Tape and Reel

Quantity

2000

3000

AUIRLR2905

Dpak

AUIRLR2905

AUIRLR2905TR

AUIRLR2905TRL

AUIRLR2905TRR

AUIRLU2905

Tape and Reel Left

Tape and Reel Right

Tube

AUIRLU2905

Ipak

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the

specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Max.

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Units

@ T = 25°C

@ T = 100°C

160

Power Dissipation

110

0.71

± 16

W/°C

@T = 25°C

Linear Derating Factor

Gate-to-Source Voltage

210

E_AS

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

200

E_AS(tested )

I_AR

E_AR

Repetitive Avalanche Energy

Operating Junction and

-55 to + 175

Storage Temperature Range

°C

STG

300

Soldering Temperature, for 10 seconds (1.6mm from case )

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

June 5, 2012 PD-97623A

12 3 4 5 6 7...11

中文翻译

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与AUIRLR2905TR相关器件

型号	品牌	获取价格	描述	数据表
AUIRLR2905TRL	INFINEON	获取价格	Advanced Planar Technology
AUIRLR2905TRR	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
AUIRLR2905Z	INFINEON	获取价格	Specifically designed for Automotive applications
AUIRLR2905ZTR	INFINEON	获取价格	Specifically designed for Automotive applications
AUIRLR2905ZTRL	INFINEON	获取价格	Specifically designed for Automotive applications
AUIRLR2905ZTRR	INFINEON	获取价格	Specifically designed for Automotive applications
AUIRLR2908	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRLR2908TR	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRLR2908TRL	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRLR2908TRR	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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