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AUIRLL2705TR

更新时间： 2024-02-24 06:02:49
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 260K
描述
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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AUIRLL2705TR 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：,Reach Compliance Code：unknown
风险等级：5.74配置：Single
最大漏极电流 (Abs) (ID)：5.2 AFET 技术：METAL-OXIDE SEMICONDUCTOR
最高工作温度：150 °C极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：2.1 W子类别：FET General Purpose Power
表面贴装：YESBase Number Matches：1

AUIRLL2705TR 数据手册

 浏览型号AUIRLL2705TR的Datasheet PDF文件第2页浏览型号AUIRLL2705TR的Datasheet PDF文件第3页浏览型号AUIRLL2705TR的Datasheet PDF文件第4页浏览型号AUIRLL2705TR的Datasheet PDF文件第5页浏览型号AUIRLL2705TR的Datasheet PDF文件第6页浏览型号AUIRLL2705TR的Datasheet PDF文件第7页 
AUTOMOTIVE GRADE  
AUIRLL2705  
HEXFET® Power MOSFET  
Features  
l AdvancedPlanarTechnology  
l LowOn-Resistance  
l Logic Level Gate Drive  
l Dynamicdv/dtRating  
l 150°C Operating Temperature  
l Fast Switching  
D
V(BR)DSS  
RDS(on) max.  
ID  
55V  
0.04Ω  
3.8A  
G
S
l Fully Avalanche Rated  
l Repetitive Avalanche Allowed up to  
Tjmax  
D
l Lead-Free, RoHS Compliant  
l Automotive Qualified*  
S
Description  
D
G
Specifically designed for Automotive applications, this  
cellular design of HEXFET® Power MOSFETs utilizes  
the latest processing techniques to achieve low on-  
resistance per silicon area. This benefit combined  
with the fast switching speed and ruggedized device  
design that HEXFET power MOSFETs are well known  
for, provides the designer with an extremely efficient  
and reliable device for use in Automotive and a wide  
variety of other applications.  
SOT-223  
AUIRLL2705  
G
D
S
Gate  
Drain  
Source  
Standard Pack  
Form  
Base Part Number  
Package Type  
Orderable Part Number  
Quantity  
95  
2500  
Tube  
Tape and Reel  
AUIRLL2705  
AUIRLL2705TR  
AUIRLL2705  
SOT-223  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the  
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
5.2  
3.8  
3.0  
30  
Units  
I
I
I
I
@ TA = 25°C  
@ TA = 25°C  
@ TA = 70°C  
D
D
D
A
DM  
2.1  
P
P
@TA = 25°C Power Dissipation (PCB Mount)  
D
D
W
1.0  
8.3  
Power Dissipation (PCB Mount)  
Linear Derating Factor (PCB Mount)  
Gate-to-Source Voltage  
@TA = 25°C  
mW/°C  
V
± 16  
V
GS  
EAS  
IAR  
110  
3.8  
Single Pulse Avalanche Energy (Thermally Limited)  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
0.10  
7.5  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Operating Junction and  
mJ  
V/ns  
-55 to + 150  
T
T
J
°C  
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
93  
Max.  
120  
60  
Units  
RθJA  
RθJA  
Junction-to-Ambient (PCB mount, steady state)  
Junction-to-Ambient (PCB mount, steady state)  
°C/W  
48  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
1
www.irf.com © 2014 International Rectifier  
Submit Datasheet Feedback  
March 26, 2014  
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AUIRLL2705TR 替代型号

型号 品牌 替代类型 描述 数据表
AUIRLL2705 INFINEON

类似代替

 Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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