5秒后页面跳转
捷配首页

Datasheet > AUIRLR2703TRL
AUIRLR2703TRL PDF预览

AUIRLR2703TRL

更新时间： 2024-02-20 15:22:31
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 276K
描述
Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3

阅读下载

中文翻译

获取价格

AUIRLR2703TRL 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：DPAK-3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：5.12其他特性：AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
雪崩能效等级（Eas）：200 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：20 A最大漏极电流 (ID)：20 A
最大漏源导通电阻：0.045 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-252AAJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：45 W
最大脉冲漏极电流 (IDM)：96 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRLR2703TRL 数据手册

 浏览型号AUIRLR2703TRL的Datasheet PDF文件第2页浏览型号AUIRLR2703TRL的Datasheet PDF文件第3页浏览型号AUIRLR2703TRL的Datasheet PDF文件第4页浏览型号AUIRLR2703TRL的Datasheet PDF文件第5页浏览型号AUIRLR2703TRL的Datasheet PDF文件第6页浏览型号AUIRLR2703TRL的Datasheet PDF文件第7页 
PD - 97620  
AUTOMOTIVEGRADE  
AUIRLR2703  
HEXFET® Power MOSFET  
• AdvancedPlanarTechnology  
• Logic-LevelGateDrive  
• LowOn-Resistance  
• Dynamic dV/dT Rating  
• 175°COperatingTemperature  
• Fast Switching  
D
S
V(BR)DSS  
30V  
45m  
RDS(on) max.  
Ω
G
ID (Silicon Limited)  
ID (Package Limited)  
23A  
20A  
• Fully Avalanche Rated  
• Repetitive Avalanche Allowed up to Tjmax  
• Lead-Free,RoHSCompliant  
• AutomotiveQualified*  
D
Description  
S
Specifically designed for Automotive applications,  
this cellular design of HEXFET® Power MOSFETs  
utilizes the latest processing techniques to achieve  
low on-resistance per silicon area. This benefit  
combined with the fast switching speed and  
ruggedized device design that HEXFET power  
MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use  
in Automotive and a wide variety of other applications.  
G
D-Pak  
AUIRLR2703  
G
Gate  
D
S
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
23  
Parameter  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
@ T = 25°C  
C
I
I
I
I
D
D
D
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
16  
A
@ T = 100°C  
C
20  
@ T = 25°C  
C
96  
DM  
45  
P
@T = 25°C Power Dissipation  
W
W/°C  
V
D
C
0.30  
± 16  
Linear Derating Factor  
Gate-to-Source Voltage  
V
GS  
EAS  
77  
200  
14  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
EAS (tested )  
IAR  
A
EAR  
4.5  
5.0  
Repetitive Avalanche Energy  
Peak Diode Recovery  
mJ  
dv/dt  
V/ns  
-55 to + 175  
Operating Junction and  
T
T
J
Storage Temperature Range  
°C  
STG  
300  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
Max.  
3.3  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Case  
–––  
–––  
–––  
Junction-to-Ambient (PCB mount)  
Junction-to-Ambient  
50  
°C/W  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
01/11/2011  
1234567...12

中文翻译

下载PDF

AUIRLR2703TRL 替代型号

型号 品牌 替代类型 描述 数据表
AUIRLR2703TRR INFINEON

完全替代

 Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Met
AUIRLR2703TR INFINEON

类似代替

 Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Met

与AUIRLR2703TRL相关器件

型号 品牌 获取价格 描述 数据表
AUIRLR2703TRR INFINEON

获取价格

 		Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Met
AUIRLR2905 INFINEON

获取价格

 		Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
AUIRLR2905TR INFINEON

获取价格

 		Advanced Planar Technology
AUIRLR2905TRL INFINEON

获取价格

 		Advanced Planar Technology
AUIRLR2905TRR INFINEON

获取价格

 		Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
AUIRLR2905Z INFINEON

获取价格

 		Specifically designed for Automotive applications
AUIRLR2905ZTR INFINEON

获取价格

 		Specifically designed for Automotive applications
AUIRLR2905ZTRL INFINEON

获取价格

 		Specifically designed for Automotive applications
AUIRLR2905ZTRR INFINEON

获取价格

 		Specifically designed for Automotive applications
AUIRLR2908 INFINEON

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

与AUIRLR2703TRL相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证