5秒后页面跳转
捷配首页

Datasheet > AUIRLL024N
AUIRLL024N PDF预览

AUIRLL024N

更新时间： 2024-01-29 03:10:49
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲光电二极管晶体管
页数 文件大小 规格书
11页 207K
描述
Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4

阅读下载

中文翻译

获取价格

AUIRLL024N 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：TO-261AA
包装说明：ROHS COMPLIANT PACKAGE-4针数：4
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.69其他特性：AVALANCHE RATED
雪崩能效等级（Eas）：120 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：55 V
最大漏极电流 (Abs) (ID)：4.4 A最大漏极电流 (ID)：3.1 A
最大漏源导通电阻：0.065 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-261AAJESD-30 代码：R-PDSO-G4
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：4
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：2.1 W
最大脉冲漏极电流 (IDM)：12 A子类别：FET General Purpose Power
表面贴装：YES端子面层：MATTE TIN
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRLL024N 数据手册

 浏览型号AUIRLL024N的Datasheet PDF文件第2页浏览型号AUIRLL024N的Datasheet PDF文件第3页浏览型号AUIRLL024N的Datasheet PDF文件第4页浏览型号AUIRLL024N的Datasheet PDF文件第5页浏览型号AUIRLL024N的Datasheet PDF文件第6页浏览型号AUIRLL024N的Datasheet PDF文件第7页 
AUTOMOTIVE GRADE  
AUIRLL024N  
Features  
HEXFET® Power MOSFET  
Advanced Planar Technology  
D
S
Low On-Resistance  
V(BR)DSS  
55V  
0.065  
Logic Level Gate Drive  
Dynamic dV/dT Rating  
150°C Operating Temperature  
Fast Switching  
Fully Avalanche Rated  
Repetitive Avalanche Allowed up to Tjmax  
RDS(on) max.  
ID  
Ω
G
3.1A  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
D
Description  
Specifically designed for Automotive applications, this  
Cellular design of HEXFET® Power MOSFETs utilizes  
the latest processing techniques to achieve low on-  
resistance per silicon area. This benefit combined with  
the fast switching speed and ruggedized device design  
that HEXFET power MOSFETs are well known for,  
provides the designer with an extremely efficient and  
reliable device for use in Automotive and a wide variety  
of other applications.  
S
D
G
SOT-223  
AUIRLL024N  
G
D
S
Gate  
Drain  
Source  
Standard Pack  
Base part number  
Package Type  
Orderable Part Number  
Form  
Quantity  
Tube  
Tape and Reel  
95  
2500  
AUIRLL024N  
AUIRLL024NTR  
AUIRLL024N  
SOT-223  
Absolute Maximum Ratings  
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated  
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect  
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still  
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
4.4  
Units  
I
I
I
I
@ T = 25°C  
A
D
D
D
3.1  
@ T = 25°C  
A
A
2.5  
@ T = 70°C  
A
12  
DM  
2.1  
Power Dissipation (PCB Mount)  
Power Dissipation (PCB Mount)  
Linear Derating Factor (PCB Mount)  
Gate-to-Source Voltage  
W
W
P
P
@T = 25°C  
A
D
D
1.0  
@T = 25°C  
A
8.3  
W/°C  
V
± 16  
120  
V
EAS  
IAR  
GS  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
3.1  
EAR  
dv/dt  
0.1  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
mJ  
5.0  
V/ns  
°C  
-55 to + 150  
Operating Junction and  
T
T
J
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
90  
Max.  
120  
60  
Units  
RθJA  
RθJA  
Junction-to-Ambient (PCB mount, steady state)  
°C/W  
Junction-to-Ambient (PCB mount, steady state)  
50  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
1
www.irf.com © 2014 International Rectifier  
Submit Datasheet Feedback  
March 25, 2014  
1234567...11

中文翻译

下载PDF

AUIRLL024N 替代型号

型号 品牌 替代类型 描述 数据表
AUIRLL024NTR INFINEON

类似代替

 Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Me

与AUIRLL024N相关器件

型号 品牌 获取价格 描述 数据表
AUIRLL024NTR INFINEON

获取价格

 		Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Me
AUIRLL024Z INFINEON

获取价格

 		Advanced Process Technology
AUIRLL024ZTR INFINEON

获取价格

 		Advanced Process Technology
AUIRLL2705 INFINEON

获取价格

 		Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRLL2705TR INFINEON

获取价格

 		Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRLR014N INFINEON

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET
AUIRLR014NTR INFINEON

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRLR014NTRL INFINEON

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET
AUIRLR014NTRR INFINEON

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRLR024N INFINEON

获取价格

 		Advanced Planar Technology Low On-Resistance Fully Avalanche Rated

与AUIRLL024N相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证