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AUIRLL024ZTR PDF预览

AUIRLL024ZTR

更新时间： 2024-01-17 21:07:38
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 234K
描述
Advanced Process Technology

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中文翻译

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AUIRLL024ZTR 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：8 weeks风险等级：0.91
配置：Single最大漏极电流 (Abs) (ID)：5 A
FET 技术：METAL-OXIDE SEMICONDUCTOR湿度敏感等级：1
最高工作温度：150 °C峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：2.8 W
子类别：FET General Purpose Power表面贴装：YES
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

AUIRLL024ZTR 数据手册

 浏览型号AUIRLL024ZTR的Datasheet PDF文件第2页浏览型号AUIRLL024ZTR的Datasheet PDF文件第3页浏览型号AUIRLL024ZTR的Datasheet PDF文件第4页浏览型号AUIRLL024ZTR的Datasheet PDF文件第5页浏览型号AUIRLL024ZTR的Datasheet PDF文件第6页浏览型号AUIRLL024ZTR的Datasheet PDF文件第7页 
PD - 97762  
AUTOMOTIVE GRADE  
AUIRLL024Z  
HEXFET® Power MOSFET  
Features  
●
●
●
●
●
Advanced Process Technology  
D
V(BR)DSS  
55V  
UltraLowOn-Resistance  
150°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to  
Tjmax  
RDS(on) typ.  
48m  
60m  
G
max.  
S
ID  
5.0A  
●
●
Lead-Free,RoHSCompliant  
Automotive Qualified *  
Description  
D
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest pro-  
cessing techniques to achieve extremely low on-  
resistance per silicon area. Additional features of this  
design are a 175°C junction operating temperature,  
fast switching speed and improved repetitive ava-  
lanche rating . These features combine to make this  
design an extremely efficient and reliable device for  
use in Automotive applications and a wide variety of  
other applications.  
S
D
G
SOT-223  
AUIRLL024Z  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
5.0  
Units  
I
I
I
@ TA = 25°C  
@ TA = 70°C  
D
D
4.0  
A
40  
DM  
2.8  
P
P
@TA = 25°C Power Dissipation  
D
D
1.0  
Power Dissipation  
W
W/°C  
V
@TA = 25°C  
0.02  
± 16  
Linear Derating Factor  
Gate-to-Source Voltage  
V
GS  
EAS  
21  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
E
AS (tested )  
38  
IAR  
EAR  
See Fig.12a, 12b, 15, 16  
A
Repetitive Avalanche Energy  
mJ  
-55 to + 150  
Operating Junction and  
T
T
J
Storage Temperature Range  
°C  
STG  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
45  
Units  
RJA  
RJA  
Junction-to-Ambient (PCB mount, steady state)  
Junction-to-Ambient (PCB mount, steady state)  
°C/W  
–––  
120  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
02/28/12  
1234567...13

中文翻译

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AUIRLL024ZTR 替代型号

型号 品牌 替代类型 描述 数据表
AUIRLL024Z INFINEON

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 Advanced Process Technology
IRLL024Z INFINEON

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