Datasheet > AUIRLR014NTR

AUIRLR014NTR

更新时间： 2024-01-05 15:51:48

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	203K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AUIRLR014NTR 数据手册

AUTOMOTIVEGRADE

PD - 97740

AUIRLR014N

HEXFET^®Power MOSFET

• AdvancedPlanarTechnology

• Logic-LevelGateDrive

• LowOn-Resistance

• Dynamic dV/dT Rating

• 175°COperatingTemperature

• Fast Switching

V_(BR)DSS

R_DS(on)max.

I_D

55V

0.14



• Fully Avalanche Rated

• Repetitive Avalanche Allowed up to Tjmax

• Lead-Free,RoHSCompliant

• AutomotiveQualified*

10A

Description

Specifically designed for Automotive applications,

this cellular design of HEXFET® Power MOSFETs

utilizes the latest processing techniques to achieve

low on-resistance per silicon area. This benefit com-

bined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are

well known for, provides the designer with an ex-

tremely efficient and reliable device for use in Auto-

motive and a wide variety of other applications.

D-Pak

AUIRLR014N

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Max.

Parameter

Units

Continuous Drain Current, V_GS@ 10V

@ T = 25°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

7.1

@ T = 100°C

Power Dissipation

@T = 25°C

W/°C

0.2

Linear Derating Factor

Gate-to-Source Voltage

± 16

E_AS

I_AR

Single Pulse Avalanche Energy (Thermally Limited)

Avalanche Current

6.0

E_AR

dv/dt

2.8

5.0

Repetitive Avalanche Energy

Peak Diode Recovery

V/ns

-55 to + 175

Operating Junction and

Storage Temperature Range

°C

STG

300

Soldering Temperature, for 10 seconds (1.6mm from case )

Thermal Resistance

Parameter

Typ.

Max.

5.3

Units

R_JC

R_JA

Junction-to-Case

–––

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

°C/W

110

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

11/10/11

12 3 4 5 6 7...12

中文翻译

下载PDF

与AUIRLR014NTR相关器件

型号	品牌	获取价格	描述	数据表
AUIRLR014NTRL	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET
AUIRLR014NTRR	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRLR024N	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance Fully Avalanche Rated
AUIRLR024NTR	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance Fully Avalanche Rated
AUIRLR024NTRL	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance Fully Avalanche Rated
AUIRLR024NTRR	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance Fully Avalanche Rated
AUIRLR024Z	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Met
AUIRLR024ZTR	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Met
AUIRLR024ZTRL	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Met
AUIRLR024ZTRR	INFINEON	获取价格	暂无描述

与AUIRLR014NTR相关文章

LTM4644/LTM4644-1：创新的四输出同步降压微模块调节器
2024-07-02

4
2N3500：一款多用途NPN硅晶体管的全面解析
2024-07-02

7
最详细资料解析：BA5917AFP参数说明、引脚说明
2024-07-02

10
MAX232IDR数据手册：产品特性、电气参数、替代型号推荐
2024-07-02

6

产品中心

服务支持

精选活动

关于我们

帮助中心

AUIRLR014NTR

AUIRLR014NTR 数据手册

与AUIRLR014NTR相关器件

与AUIRLR014NTR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AUIRLR014NTR

AUIRLR014NTR 数据手册

与AUIRLR014NTR相关器件

与AUIRLR014NTR相关文章

您还可以找

您在本页遇到什么问题？