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AUIRLR024ZTRL

更新时间： 2024-01-06 06:28:18
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 707K
描述
Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2

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AUIRLR024ZTRL 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：unknown
风险等级：5.15其他特性：AVALANCHE RATED, ULTRA LOW RESISTANCE
雪崩能效等级（Eas）：25 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：55 V
最大漏极电流 (Abs) (ID)：16 A最大漏极电流 (ID)：16 A
最大漏源导通电阻：0.058 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-252AAJESD-30 代码：R-PSSO-G2
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：35 W最大脉冲漏极电流 (IDM)：64 A
参考标准：AEC-Q101子类别：FET General Purpose Power
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRLR024ZTRL 数据手册

 浏览型号AUIRLR024ZTRL的Datasheet PDF文件第2页浏览型号AUIRLR024ZTRL的Datasheet PDF文件第3页浏览型号AUIRLR024ZTRL的Datasheet PDF文件第4页浏览型号AUIRLR024ZTRL的Datasheet PDF文件第5页浏览型号AUIRLR024ZTRL的Datasheet PDF文件第6页浏览型号AUIRLR024ZTRL的Datasheet PDF文件第7页 
AUIRLR024Z  
AUIRLU024Z  
AUTOMOTIVE GRADE  
HEXFET® Power MOSFET  
Features  
Logic Level  
VDSS  
55V  
Advanced Process Technology  
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
RDS(on)  
typ.  
46m  
58m  
16A  
max.  
ID  
D
D
Description  
Specifically designed for Automotive applications, this HEXFET®  
Power MOSFET utilizes the latest processing techniques to  
achieve extremely low on-resistance per silicon area. Additional  
features of this design are a 175°C junction operating temperature,  
fast switching speed and improved repetitive avalanche rating .  
These features combine to make this design an extremely efficient  
and reliable device for use in Automotive applications and a wide  
variety of other applications.  
S
S
D
G
G
I-Pak  
AUIRLU024Z  
G
D
S
Gate  
Drain  
Source  
Standard Pack  
Form  
Tube  
Base part number  
AUIRLU024Z  
Package Type  
I-Pak  
Orderable Part Number  
Quantity  
75  
75  
3000  
AUIRLU024Z  
AUIRLR024Z  
AUIRLR024ZTRL  
Tube  
Tape and Reel Left  
AUIRLR024Z  
D-Pak  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress  
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance  
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless  
Symbol  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V  
16  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
11  
64  
A
PD @TC = 25°C  
Maximum Power Dissipation  
Linear Derating Factor  
35  
W
W/°C  
V
0.23  
VGS  
EAS  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy (Thermally Limited)   
± 16  
25  
mJ  
EAS (Tested)  
Single Pulse Avalanche Energy Tested Value   
Avalanche Current   
25  
IAR  
See Fig.15,16, 12a, 12b  
A
EAR  
TJ  
Repetitive Avalanche Energy   
mJ  
Operating Junction and  
Storage Temperature Range  
Soldering Temperature, for 10 seconds (1.6mm from case)  
-55 to + 175  
300  
TSTG  
°C  
Thermal Resistance  
Symbol  
Parameter  
Junction-to-Case   
Typ.  
–––  
–––  
–––  
Max.  
4.28  
50  
Units  
RJC  
RJA  
RJA  
Junction-to-Ambient ( PCB Mount)   
Junction-to-Ambient  
°C/W  
110  
HEXFET® is a registered trademark of Infineon.  
*Qualification standards can be found at www.infineon.com  
1
2017-10-09  
1234567...12

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AUIRLR024ZTRL 替代型号

型号 品牌 替代类型 描述 数据表
AUIRLR024ZTRR INFINEON

完全替代

 暂无描述
AUIRLR024Z INFINEON

完全替代

 Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Met
IRLR024NTRPBF INFINEON

类似代替

 Advanced Process Technology

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